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New MEMS Technology Using Multi-Layer NILC Poly-Si and NiSi Films

Published online by Cambridge University Press:  15 March 2011

W. M. Cheung ,
C. F. Cheng ,
M. C. Poon ,
M. Qin ,
C. Y. Yuen  and
Mansun Chan
W. M. Cheung
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C. F. Cheng
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. Qin
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C. Y. Yuen
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
Mansun Chan
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
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Abstract

A novel MEMS technology using multi-layer poly-silicon (poly-Si) is proposed. The poly-Si film is formed from the new Nickel-Induced-Lateral-Crystallization (NILC) method and has very large grain (>10νm) and near crystal quality. 700 nm thermal oxide was grown on a Si wafer. 100 nm LPCVD amorphous Si was deposited and followed by a 50 Å Ni deposition. The a-Si was crystallized at 550°C for 65 hours and subsequent 800°C for 2 hours to form the first (lower) NILC poly-Si layer. N-channel TFTs were fabricated on the NILC polysilicon layer. The process was repeated and a second (upper) polysilicon layer and TFTs were formed on top of the first polysilicon layer.

The lower polysilicon has slightly larger grains and better material quality. Thin-film- transistors (TFT) fabricated on the 3-dimensional (3-D) poly-Si layers have I-V characteristics similar to (>40%) silicon-on-insulator TFTs. While TFTs on lower layer have better mobility and device properties, TFTs on upper layer have better uniformity. The accumulated heating and other effects have also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B5.24
Copyright
Copyright © Materials Research Society 2002

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