Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T09:43:58.614Z Has data issue: false hasContentIssue false

New Low-melting Cadmium Precursors for the Detailed Study of Texture Effects in MOCVD Derived CdO Thin-Films

Published online by Cambridge University Press:  01 February 2011

Andrew W. Metz
Affiliation:
Department of Chemistry, the Materials Research Center, and the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113
John R. Ireland
Affiliation:
Department of Chemistry, the Materials Research Center, and the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113
Jun Ni
Affiliation:
Department of Chemistry, the Materials Research Center, and the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113
Kenneth R. Poeppelmeier
Affiliation:
Department of Chemistry, the Materials Research Center, and the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113
Carl R. Kannewurf
Affiliation:
Department of Chemistry, the Materials Research Center, and the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113
Tobin J. Marks
Affiliation:
Department of Chemistry, the Materials Research Center, and the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113
Get access

Abstract

A new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)2(N, N-DE-N', N'-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

(1) Asahi, R.; Babcock, J. R.; Edleman, N. L.; Kammler, D. R.; Ko, D.; Lane, M. A.; Metz, A. W.; Wang, A.; Yan, M.; Chang, R. P. H.; Dravid, V.; Freeman, A. J.; Kannewurf, C. R.; Marks, T. J.; Mason, T. O.; Poeppelmeier, K. R. Proc. -Electrochem. Soc. 2001, 2001-10, 333348; Wang, A.; Babcock, J. R.; Edleman, N. L.; Metz, A. W.; Lane, M. A.; Asahi, R.; Dravid, V. P.; Kannewurf, C. R.; Freeman, A. J.; Marks, T. J. Proc. Natl. Acad. Sci. U. S. A. 2001, 98, 7113-7116.Google Scholar
(2) Babcock, J. R.; Wang, A.; Metz, A. W.; Edleman, N. L.; Metz, M. V.; Lane, M. A.; Kannewurf, C. R.; Marks, T. J. Adv. Mater. Chem. Vapor Dep. 2001, 7, 239242.Google Scholar
(3) Barnes, T. M.; Li, X.; DeHart, C.; Moutinho, H.; Asher, S.; Yan, Y.; Gessert, T. A. Mat. Res. Soc. Symp. Proc. 2001, 666, F1.8; Li, X.; Yan, Y.; Mason, A.; Gessert, T. A.; Coutts, T. J. Electrochem. Solid State Lett. 2001, 4, C66-C68; Li, X.; Young, D. L.; Moutinho, H.; Yan, Y.; Narayanswamy, C.; Gessert, T. A.; Coutts, T. J. Electrochem. Solid State Lett. 2001, 4, C43-C46; Li, X.; Barnes, T. M.; DeHart, C.; King, D.; Asher, S.; Young, M.; Gessert, T. A.; Coutts, T. J. Mat. Res. Soc. Symp. Proc. 2001, 666, F3.18.11.Google Scholar
(4) Yan, M.; Lane, M.; Kannewurf, C. R.; Chang, R. P. H. Appl. Phys. Lett. 2001, 78, 23422344.Google Scholar
(5) Gulino, A.; Castelli, F.; Dapporto, P.; Rossi, P.; Fragala, I. Chem. Mater. 2002, 14, 704709.Google Scholar
(6) Hatanpaeae, T.; Kansikas, J.; Mutikainen, I.; Leskelae, M. Inorg. Chem. 2001, 40, 788794; Belot, J. A.; Neumayer, D. A.; Reedy, C. J.; Studebaker, D. B.; Hinds, B. J.; Stern, C. L.; Marks, T. J. Chem. Mater. 1997, 9, 1638-1648.Google Scholar
(7) Hinds, B. J.; McNeely, R. J.; Studebaker, D. B.; Marks, T. J.; Hogan, T. P.; Schindler, J. L.; Kannewurf, C. R.; Zhang, X. F.; Miller, D. J. J. Mater. Res. 1997, 12, 12141236.Google Scholar
(8) Lyding, J. W.; Marcy, H. O.; Marks, T. J.; Kannewurf, C. R. IEEE Trans. Instrum. Meas. 1988, 37, 7680.Google Scholar