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A New General Method for the Determination of Optical Properties of Amorphous Silicon Films

Published online by Cambridge University Press:  25 February 2011

G. Amato ,
L. Boarino ,
F. Fizzotti  and
C. Manfredotti
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
L. Boarino
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
F. Fizzotti
Affiliation:
Dipartimento di Fisica Sperimentale, Università di Torino, Via P. Giuria 1, 10125 Torino, Italy
C. Manfredotti
Affiliation:
Dipartimento di Fisica Sperimentale, Università di Torino, Via P. Giuria 1, 10125 Torino, Italy
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Abstract

We propose to apply a new method to model the optical response of amorphous silicon thin films. This method presents the advantage of having a good physical insight. On the other hand, although the model has been originally tested on different materials like a-Si, a-Ge and a-GaAs, we show that it is also sensitive to small differences like those that can exist between intrinsic and doped a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 633
Copyright
Copyright © Materials Research Society 1990

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References

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