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A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

Published online by Cambridge University Press:  17 March 2011

Kianoush Naeli ,
Shamsoddin Mohajerzadeh ,
Ali Khakifirooz ,
Saber Haji  and
Ebrahim A. Soleimani
Kianoush Naeli
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
Shamsoddin Mohajerzadeh
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
Ali Khakifirooz
Affiliation:
Currently at Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, [email protected]
Saber Haji
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
Ebrahim A. Soleimani
Affiliation:
Electrical and Computer Eng. Dept., University of Tehran, Tehran 14395-515, IRAN
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Abstract

The effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.6
Copyright
Copyright © Materials Research Society 2001

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References

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