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New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations

Published online by Cambridge University Press:  28 February 2011

Eliezer Dovid Richmond ,
Alvin R. Knudson  and
H. Kawayoshi
Eliezer Dovid Richmond
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C. 20375-5000
Alvin R. Knudson
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C. 20375-5000
H. Kawayoshi
Affiliation:
Advanced Research and Applications Corporation, Sunnyvale, CA. 94086
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Abstract

A new approach is proposed for the material improvement of silicon-on-sapphire (SOS). This approach utilizes the phenomena that the defect elimination throughout the silicon layer depends on both the deep and shallow self-implantations of the double solid phase epitaxial growth (DSPEG) technique for SOS material improvement. The new aspects of this approach are that the deep implantation does not form an amorphous layer, and therefore the ion damage to the substrate is minimized eliminating Al autodoping of the silicon layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 615
Copyright
Copyright © Materials Research Society 1987

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References

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