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New Dry-Etch Chemistries for III-V Semiconductors

Published online by Cambridge University Press:  22 February 2011

S. J. Pearton ,
U. K. Chakrabarti ,
F. Ren ,
C. R. Abernathy ,
A. Katz ,
W. S. Hobson  and
C. Constantine
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
U. K. Chakrabarti
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. Constantine
Affiliation:
Plasma Therm IP, St. Petersburg, FL
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Abstract

For some dry etching applications in III-V semiconductors, such as via hole formation in InP substrates, the currently used plasma chemistries have etch rates that are up to a factor of 30 too slow. We report on the development of 3 new classes of discharge chemistries, namely C12/CH4 /H2/Ar at 150°C (yielding InP etch rates of >1 μm · min−1 at 1 mTorr and –80V dc), HBr/H2 for selective etching of InGaAs over AlInAs, and iodine-based plasmas (HI/H2, CH3 I/H2) that offer rapid anisotropic etching of all III-V materials at room temperature. In all cases, Electron Cyclotron Resonance sources (either multipolar or magnetic mirror) with additional rf biasing of the sample position are utilized to obtain low damage pattern transfer processes that generally use metal contacts on device structures as self-aligned etch masks. The temperature dependence of etch rates with these new chemistries display non-Arrhenius behavior in the range 50-250°C and a detailed study of the phenomenon are reported. Electrical, optical and chemical analysis of the etched surfaces show that it is possible to achieve essentially damage-free pattern transfer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 399
Copyright
Copyright © Materials Research Society 1994

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References

1. Katz, A., Pearton, S. J., and Geva, M., Appl. Phys. Lett. 59, 286 (1991).CrossRefGoogle Scholar
2. Yuba, J., Gamo, K., He, X. G., Zhang, J. S., and Namba, S., Jap. J. Appl. Phys. 22, 1211 (1983).CrossRefGoogle Scholar
3. Schilling, M. and Wunstel, K., Appl. Phys. Lett. 49, 710 (1986).CrossRefGoogle Scholar
4. Hayes, T. R., InP and Related Materials ed. Katz, A. (Boston, MA: Artech House 1991), Chapter 8.Google Scholar
5. Agrawal, G. P. and Dutta, N. K., Long Wavelength Semiconductor Lasers (New York, Van Nostrand 1986).CrossRefGoogle Scholar
6. Pearton, S. J., Ren, F., Hobson, W. S., Green, C. A., and Chakrabarti, U. K., Semicond. Sci. Technol. 7, 1217 (1992).CrossRefGoogle Scholar
7. Huo, D. T. C., Yan, M. F., and Wynn, J. D., J. Electrochem. Soc. 137, 3639 (1990).CrossRefGoogle Scholar
8. Niggebrugge, U., Klug, M. and Garus, G., Inst. Phys. Conf. Ser. 79, 367 (1985).Google Scholar
9. Asmussen, J., J. Vac. Sci. Technol. A 7, 883 (1989).CrossRefGoogle Scholar
10. McNevin, S. C., J. Vac. Sci. Technol. B 4, 1216 (1986).CrossRefGoogle Scholar
11. Gurp, G. J. Van, Jacobs, J. M., Binsma, J. J. M. and Tiemeijer, C. F., Jap. J. Appl. Phys. 28, 1236 (1989).CrossRefGoogle Scholar
12. Roijen, R. Van, Kemp, M., Bulle-Lieuwma, C., Izjendoorn, L. van and Thijssen, T., J. Appl. Phys. 70, 3983 (1991).CrossRefGoogle Scholar
13. Constantine, C., Barratt, C., Pearton, S. J., Ren, F. and Lothian, J. R., Appl. Phys. Lett. 61, 2899 (1992).CrossRefGoogle Scholar
14. Flamm, D., in Plasma Etching-An Introduction, ed. Manos, D. and Flaman, D. E. (Academic Press, San Diego, 1989).Google Scholar
15. Constantine, C., Barratt, C., Pearton, S. J., Ren, F. and Lothian, J. R., Electron. Lett. 28, 1749 (1992).CrossRefGoogle Scholar
16. Ren, F., Pearton, S. J., Tseng, B., Lothian, J. R. and Segner, B. P., J. Electrochem. Soc. Nov. 1993 (in press).Google Scholar
17. Flanders, D. C., Pressman, L. D. and Pinelli, G., J. Vac. Sci. Technol. B 8, 1990 (1990).CrossRefGoogle Scholar
18. Pearton, S. J., Chakrabarti, U. K., Katz, A., Ren, F. and Fullowan, T. R., Appl. Phys. Lett. 60, 838 (1992).CrossRefGoogle Scholar
19. Pearton, S. J., Chakrabarti, U. K., Hobson, W. S., Abernathy, C. R., Katz, A., Ren, F., Fullowan, T. R. and Perley, A., J. Electrochem. Soc. 139, 1763 (1992).CrossRefGoogle Scholar
20. Wong, H. F., Green, D. L., Liu, T., Lishan, D. G., Bellis, M., Hu, E. L., Petroff, P. M., Holtz, P. O. and Merz, J. L., J. Vac. Sci. Technol B6, 1906 (1988).CrossRefGoogle Scholar
21. Hidaka, H., Akita, R., Taneya, M. and Sugimoto, Y., Electron. Lett. 26, 1112 (1990).CrossRefGoogle Scholar
22. Swaminathan, V., Asom, M. T., Chakrabarti, U. K. and Pearton, S. J., Appl. Phys. Lett. 58, 1256 (1991).CrossRefGoogle Scholar
23. Pearton, S. J., Corbett, J. W. and Shi, T. S., Appl. Phys. A43, 153 (1987).CrossRefGoogle Scholar
24. Moehrle, M., Appl. Phys. Lett. 56, 542 (1990).CrossRefGoogle Scholar
25. Chakrabarti, U. K., Pearton, S. J., Katz, A., Hobson, W. S. and Abernathy, C. R., J. Vac. Sci. Technol. B1O 2378 (1992).CrossRefGoogle Scholar
26. Donnelly, V. M., Flamm, D. L., Tu, C. W. and Ibbotson, D. E., J. Electrochem. Soc. 129, 2533 (1982).CrossRefGoogle Scholar
27. Ibbotson, D. E., Flamm, D. L., Tu, C. W. and Ibbotson, D. E., J. Electrochem. Soc. 129, 2533 (1982).Google Scholar
28. Ibbotson, D. E., Flamm, D. L. and Donnelly, V. M., J. Appl. Phys. 54, 5974 (1985).CrossRefGoogle Scholar
29. Takimoto, K., Ohnaka, K. and Shibata, J., Appl. Phys. Lett. 54, 5974 (1985).Google Scholar
30. Oehrlein, G. S., Zhang, Y., Kroesen, G. M., Fresurt, E. de and Bestwick, T. D., Appl. Phys. Lett. 58, 2252 (1991).CrossRefGoogle Scholar
31. Pearton, S. J., Chakrabarti, U. K., Lane, E., Perley, A., Abernathy, C. R., Hobson, W. S. and Jones, K. S., J. Electrochem. Soc. 139, 856 (1992).CrossRefGoogle Scholar
32. Contolini, R. J., J. Electrochem. Soc. 135, 929 (1988).CrossRefGoogle Scholar
33. Furuhata, N., Miyamoto, H., Okamoto, F. and Ohata, K., J. Appl. Phys. 65, 168 (1989).CrossRefGoogle Scholar
34. Pearton, S. J., Emerson, A. B., Chakrabarti, U. K., Lane, E., Jones, K. S., Short, K. T., White, A. E. and Fullowan, T. R., J. Appl. Phys. 66, 3839 (1989).CrossRefGoogle Scholar