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New Class of the Semiconductor Materials for Infrared Photodetection

Published online by Cambridge University Press:  25 February 2011

Boris A. Akimov ,
Nikolai B. Brandt ,
Sergei N. Chesnokov  and
Dmitriy R. Khokhlov
Boris A. Akimov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
Nikolai B. Brandt
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
Sergei N. Chesnokov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
Dmitriy R. Khokhlov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
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Abstract

We Present the new class of infrared Photodetectors based on the lead-tin tellurides doped with group III impurities. The Persistent photoconductivity effect appearing in these materials provides the opportunity of internal signal integration resulting in the considerable increase in signalto- noise ratio. The integration characteristic time may be changed by means of the operating temperature or alloy composition variation. Even if the integration time is higher than the operation time required there exists an opportunity to quench quickly (∼10−5s) the Persistent photoconductivity. In some regime of quenching the effect of giant quantum efficiency stimulation has been observed. Both the bulk crystal and thin film technologies of the Photodetector Production are developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 147
Copyright
Copyright © Materials Research Society 1991

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References

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