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A New Approach to Temperature Dependent Ideality Factors in Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

Zs. J. Horváth
Zs. J. Horváth*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76. H-1325, Hungary
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Abstract

Schottky diodes often exhibit anomalous current-vol tage characteristics at low temperatures (T) with T dependent ideality factors (IF) and apparent barrier heights (BH) evaluated for the thermionic emission. In this paper theoretical expressions are first presented for the T dependences of the IF and the apparent BH for the thermionic-field emission (TFE) including the bias dependence of BH. Model calculations are reported, which has been performed using these expressions, and their results are compared with the available experimental data. It is shown that the T dependence of the 1 Fs and apparent BHs often may be explained self consistently by the TFE with anomalously high characteristic energies Eoo.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 359
Copyright
Copyright © Materials Research Society 1992

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