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Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs

Published online by Cambridge University Press:  01 February 2011

Jun-Xian Fu ,
Xiaojun Yu ,
Yu-Hsuan Kuo  and
James S Harris Jr
Jun-Xian Fu
Affiliation:
Department of Applied Physics, Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305-4075, U.S.A.
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Abstract

Strain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD), roomtemperature photoluminesecence (RTPL) and optical absorption measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 883: Symposium FF – Advanced Devices and Materials for Laser Remote Sensing , 2005 , FF6.2
Copyright
Copyright © Materials Research Society 2005

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References

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