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Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology

Published online by Cambridge University Press:  10 February 2011

Douglas D. Cannon ,
Samerkhae Jongthammanurak ,
Jifeng Liu ,
David T. Danielson ,
Kazumi Wada ,
Jurgen Michel  and
Lionel C. Kimerling
Douglas D. Cannon
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
Samerkhae Jongthammanurak
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
Jifeng Liu
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
David T. Danielson
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
Kazumi Wada
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
Jurgen Michel
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
Lionel C. Kimerling
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge, MA 02139
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Abstract

We have fabricated the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 μm wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I2.3
Copyright
Copyright © Materials Research Society 2003

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