Published online by Cambridge University Press: 06 September 2013
Bi2Se3 thin films are imaged in the near-field using spectroscopic scattering type near-field optical microscopy (s-SNOM) at mid infrared laser wavelength region (9-11μm). Single phases Bi2Se3 thin film structures were prepared by mechanical exfoliation on silicon wafers. We report size and wavelength dependent near-field interaction contrasts in both optical amplitude and phase. We show that near-field optical imaging allows material specific identification and characterization of Bi2Se3 exfoliated samples including the confirmation of residual tape presence or removal in stacked films. We describe an alternative “shear exfoliation” sample preparation method which reliably deposits Bi2Se3 without the possibility of adhesive contaminants.