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Near Surface Defect Distribution in Silicon Under Etching

Published online by Cambridge University Press:  10 February 2011

Nikolai A. Yarykin
Nikolai A. Yarykin*
Affiliation:
Institute of Microelectronics Technology RAS, Chernogolovka, 142432 Russia
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Abstract

The distribution of hydrogen penetrated into n-type silicon crystals during chemical etching is described mathematically. The depth profiles of the defects passivated by hydrogen and of defect-hydrogen complexes are also calculated. Comparison with the experimental data obtained on the silicon crystals with radiation defects and doped with transition metals reveals that the model adequately describes the processes in the crystal. By comparing the parameters of the depth profiles, the passivation and appearance of different defects are shown to be caused by the same diffusing species. The number of hydrogen atoms contained in the defect-hydrogen complexes and the distance of the hydrogen-defect interaction are determined from the characteristic length of the defect distribution. The diffusion length (1 to 3 νm) and diffusivity (> 5-10−9 cm2s−1) of hydrogen at room temperature are found indirectly based on the other defect distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 253
Copyright
Copyright © Materials Research Society 1998

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References

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