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Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures
Published online by Cambridge University Press: 21 February 2011
Abstract
Degradation of 430 nra thick SiO2 layers in Si/SiO2/Si structures which results from high temperature annealing (1320°C) has been studied using electron spin resonance, infra-red absorption spectroscopy and refractive index measurements. Large numbers of oxygen-vacancies are found in a region ≤ 100 nm from each Si/SiO2 interface. Two types of paramagnetic defects are observed following γ or X-irradiation or hole injection. The 1106 cm−l infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.
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- Copyright © Materials Research Society 1994
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