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Near Gap Photoluminescence of GaAs Grown Directly on InP

Published online by Cambridge University Press:  28 February 2011

M. Lamont Schnoes ,
T.D. Harris ,
W.S. Hobson ,
R. M. Lum  and
J. K. Klingert
M. Lamont Schnoes
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
T.D. Harris
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
W.S. Hobson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
R. M. Lum
Affiliation:
AT&T Bell Laboratories Holmdel, New Jersey 07733
J. K. Klingert
Affiliation:
AT&T Bell Laboratories Holmdel, New Jersey 07733
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Abstract

We present a detailed photoluminescence and photoluminescence excitation study of GaAs grown directly on InP substrates by MOCVD. Reliable peak assignments are determined. With these peak assignments, we measure strain and strain uniformity, identify impurities, and assess material quality. Most samples exhibit three distinct spectral features. The two highest energy features are the strain split valence band, the third feature is a carbon impurity. The observed splitting is in good agreement with the value predicted from the thermal expansion mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 405
Copyright
Copyright © Materials Research Society 1989

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References

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