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Near Band Gap Photoluminescence Broadening In n-Gan Films

Published online by Cambridge University Press:  10 February 2011

E. Iliopoulos ,
D. Doppalapudi ,
H. M. Ng  and
T. D. Moustakas
E. Iliopoulos
Affiliation:
Center for Photonics Research and Electrical and Computer Engineering Dept., Boston University, Boston, MA 02215.
D. Doppalapudi
Affiliation:
Center for Photonics Research and Electrical and Computer Engineering Dept., Boston University, Boston, MA 02215.
H. M. Ng
Affiliation:
Center for Photonics Research and Electrical and Computer Engineering Dept., Boston University, Boston, MA 02215.
T. D. Moustakas
Affiliation:
Center for Photonics Research and Electrical and Computer Engineering Dept., Boston University, Boston, MA 02215.
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Abstract

This paper addresses the broadening mechanism of the near band gap photoluminescence in GaN films doped n-type with silicon. The films were produced by plasma assisted MBE and their carrier concentration was varied systematically from 1015 to 1020 cm−3. The photoluminescence was excited with a 10 mW He-Cd laser at 77K. At low carrier conentration ( < 1017 cm−3 ) the photoluminescence peak has FWHM of about 18 meV, while at high carrier concentration (>1018 cm−3 ) the FWHM increase monotonically with the carrier concentration up to about 120 meV. The broadening of the line at high carrier concentration is attributed to impurity band broadening and tailing of the density of states. The data were quantitatively analyzed, as a function of carrier concentration and compensation ratio, using the impurity band broadening model of Morgan [1] and the agreement between model and experimental data supports the model's validity and suggest a potential method of determining the compensation in degenerate semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 655
Copyright
Copyright © Materials Research Society 1998

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References

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