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Nb-doped TiO2 films for transparent conductive electrodes with low resistivity deposited by dc magnetron sputtering using a TiO2-x–Nb2O5-x target

Published online by Cambridge University Press:  01 February 2011

Yasushi Sato ,
Yuta Sanno ,
Nobuto Oka ,
Toshihisa Kamiyama  and
Yuzo Shigesato
Yasushi Sato
Affiliation:
[email protected], Aoyama Gakuin University, Graduate School of Science and Engineering, Sagamihara, Kanagawa, Japan
Yuta Sanno
Affiliation:
[email protected], Aoyama Gakuin University, Graduate School of Science and Engineering, Sagamihara, Kanagawa, Japan
Nobuto Oka
Affiliation:
[email protected], Aoyama Gakuin University, Graduate School of Science and Engineering, Sagamihara, Kanagawa, Japan
Toshihisa Kamiyama
Affiliation:
[email protected], AGC Ceramics Co. Ltd., Takasago, Hyogo, Japan
Yuzo Shigesato
Affiliation:
[email protected], Aoyama Gakuin University, Graduate School of Science and Engineering, Sagamihara, Kanagawa, Japan
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Abstract

Nb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using a slightly reduced TiO2-x–Nb2O5-x target with oxygen flow ratios [O2/(Ar+O2)] in the range from 0.00 to 0.20%. After post-annealing in a vacuum (6 × 10−4 Pa) at 500 and 600 °C for 1 h, the films were crystallized into the polycrystalline anatase TiO2 structure. The resistivity of the both films decreased to 6.3-6.8 × 10−4 Ω·cm with increasing [O2/(Ar+O2)] to 0.10%, where the carrier density and Hall mobility were 1.9-2.0 × 1021 cm−3 and 4.9-5.0 cm2·V−1·s−1, respectively. The films exhibited high transparency of over 60-70% in the visible region of light.

Keywords

transparent conductorsputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1109: Symposium B – Transparent Conductors and Semiconductors for Optoelectronics , 2008 , 1109-B03-26
Copyright
Copyright © Materials Research Society 2009

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References

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