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Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

J.E. Cunningham ,
T.H. Chin ,
B. Tell ,
W. Jan ,
J. A. Ditzenberger ,
T. Y. Kuo  and
C. Fonstad
J.E. Cunningham
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ.,07733
T.H. Chin
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ.,07733
B. Tell
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ.,07733
W. Jan
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ.,07733
J. A. Ditzenberger
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ.,07733
T. Y. Kuo
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ.,07733
C. Fonstad
Affiliation:
Massachusetts Institute of Technology, Cambridge, Mass.,02139
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Abstract

We report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10−cm2/sec with an activation energy of 1.8 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 33
Copyright
Copyright © Materials Research Society 1989

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References

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