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Nanothick Layer Transfer of Hydrogen-implanted Wafer Using Polysilicon Sacrificial Layer

Published online by Cambridge University Press:  01 February 2011

C. H. Huang ,
C. L. Chang ,
Y. Y. Yang ,
T. Suryasindhu ,
W. -C. Liao ,
Y. -H. Su ,
P. W. Li ,
C. -Y. Liu ,
C. S. Lai  and
J. -H. Ting
...Show all authors
C. H. Huang
Affiliation:
[email protected] Central UniversityDept. of Mechanical EngineeringChung-Li N/ATaiwan
C. L. Chang
Affiliation:
[email protected], National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
Y. Y. Yang
Affiliation:
[email protected], National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
T. Suryasindhu
Affiliation:
[email protected], National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
W. -C. Liao
Affiliation:
[email protected], National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
Y. -H. Su
Affiliation:
[email protected], National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
P. W. Li
Affiliation:
[email protected], National Central University, Dept. of Electrical Engineering, Chung-Li, Taiwan
C. -Y. Liu
Affiliation:
[email protected], National Central University, Dept. of Chemical and Materials Engineering, Chung-Li, N/A, N/A, Taiwan
C. S. Lai
Affiliation:
[email protected], Chang Gung University, Department and Graduate Institute of Electrical Engineering, Kwei-Shan, N/A, N/A, Taiwan
J. -H. Ting
Affiliation:
[email protected], National Nano Device Laboratories, Hsinchu, N/A, N/A, Taiwan
C. S. Chu
Affiliation:
[email protected], United SOI Corporation, Berkeley, CA, 94707, United States
C, -S Lee
Affiliation:
[email protected], National Central University, Dept. of Physics, Chungli, N/A, 320, Taiwan
T. -H. Lee
Affiliation:
[email protected], National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
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Abstract

An ion implantation-wafer bonding-layer splitting based 2-D nanostructure material fabrication method using polysilicon sacrificial layer for forming nanothick SOI materials without using post-thinning processes is presented in this paper. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step to achieve the hydrogen-rich buried layer which depth from the top surface is less than 100 nm in the as-implanted silicon wafer. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer after wafer bonding and layer splitting steps. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

Keywords

nanostructurenanoscaleion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 921: Symposium T – Nanomanufacturing , 2006 , 0921-T05-02
Copyright
Copyright © Materials Research Society 2006

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