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Nanostructure and Strain Field in Vertically Aligned Nano-Islands for Si/Ge 2D Photonic Nanocrystals.

Published online by Cambridge University Press:  22 March 2013

Takanori Kiguchi ,
Yusuke Hoshi ,
Takeshi Tayagaki  and
Noritaka Usami
Takanori Kiguchi
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Yusuke Hoshi
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Takeshi Tayagaki
Affiliation:
Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan PRESTO, Japan Science and Technology Agency, 5 Sanban-cho, Chiyoda-ku, Tokyo 102-0075, Japan
Noritaka Usami
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Abstract

The local strain field and the intermixing of a Ge nano-islands (NIs)/Si spacer stacked structure in a novel solar cell with a p-i-n type Si single crystal with two-dimensional photonic nanocrystals connecting to the vertically aligned NIs were analyzed using electron microscopy. High-angle annular dark field-scanning transmission electron microscope (HAADF-STEM) images show intermixing between Ge and Si clearly and reveal that the surface segregation of Ge becomes advanced. The average composition of the NIs is Ge0.42Si0.58, which is almost constant in a row of vertically aligned NIs. The local strain analysis results obtained from the high-resolution transmission electron microscope (HRTEM) images show that the strain state is partially relaxed after the elastic relaxation of NIs.

Keywords

transmission electron microscopy (TEM)scanning transmission electron microscopy (STEM)Ge
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd05-02
Copyright
Copyright © Materials Research Society 2013

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