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Nanostructuration of Cr/Si layers induced by ion beam mixing

Published online by Cambridge University Press:  22 February 2013

L. Luneville ,
L. Largeau ,
C. Deranlot ,
N. Moncoffre ,
Y. Serruys ,
F. Ott ,
G. Baldinozzi  and
D. Simeone
L. Luneville
Affiliation:
DEN/DANS/DM2S/SERMA/LLPR/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette, France
L. Largeau
Affiliation:
LPN-UPR20/CNRS, Route de Nozay, 91460 Marcoussis, France
C. Deranlot
Affiliation:
Unité Mixte de Physique CNRS/Thales, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
N. Moncoffre
Affiliation:
IPNL-IN2P3, 69622 Villeurbanne, France
Y. Serruys
Affiliation:
DEN/DANS/DMN/SRMP, CEA Saclay, 91191 Gif-sur-Yvette, France
F. Ott
Affiliation:
DSM/IRAMIS/LLB, CEA Saclay, 91191 Gif-sur-Yvette, France
G. Baldinozzi
Affiliation:
CNRS-SPMS/UMR 8580/ LRC CARMEN Ecole Centrale Paris, 92295 Châtenay-Malabry, France
D. Simeone
Affiliation:
DEN/DANS/DMN/SRMA/LA2M/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette, France
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Abstract

This work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.

Keywords

ion beam analysismicrostructureradiation effects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1514: Symposium HH – Advances in Materials for Nuclear Energy , 2013 , pp. 61 - 68
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Reader, A., Ommen, A., Weijs, P, Walter, R., Ostra, D., Rep. Prog. Phys. 56, 1397 (1992).10.1088/0034-4885/56/11/002CrossRefGoogle Scholar
Calandra, C., Bisi, O., Ottaviani, G., Surf. Sci. Rep. 4, 271 (1985).10.1016/0167-5729(85)90005-6CrossRefGoogle Scholar
Rubloff, G., Surf. Sci. 132, 268 (1983).10.1016/0039-6028(83)90543-5CrossRefGoogle Scholar
Wei, L., Averback, R., J. of Appl. Phys. 81, 613 (1997).10.1063/1.364202CrossRefGoogle Scholar
Chang, L., Segmuller, A., Esaki, L., Appl. Phys. Lett. 28, 39 (1976).10.1063/1.88558CrossRefGoogle Scholar
Parrat, L., Phys. Rev. 95, 359 (1954).10.1103/PhysRev.95.359CrossRefGoogle Scholar
Daillant, J., Gibaud, A., X-ray and Neutron Reflectivity: Principles and Applications. Berlin, Heidelberg: Springer. (1999).Google Scholar
see for a comprehensive review Y. Cheng, Mater. Sci. Rep. 5, 45 (1990).Google Scholar
Sigmund, P., Gras Marti, A., Nucl. Instr.. and Meth. 182–183, 25 (1981).10.1016/0029-554X(81)90668-6CrossRefGoogle Scholar
Simeone, D., Baldinozzi, G., Gosset, D., Berar, J., J. of Appl. Cryst. 44, 1205 (2011).10.1107/S0021889811042294CrossRefGoogle Scholar
Nastasi, A., Mayer, J., Hirvonen, J., Ion Solid interaction: Fundamentals and Applications, Cambridge University Press, (1996).10.1017/CBO9780511565007CrossRefGoogle Scholar
Averback, R., Rehn, L., Wagner, W., Wiedersich, H., Okamoto, P., Phys. Rev. B 28(6), 3100 (1983).10.1103/PhysRevB.28.3100CrossRefGoogle Scholar
Desimoni, J., Traverse, A., Phys. Rev. B 48(13), 266 (1993).10.1103/PhysRevB.48.13266CrossRefGoogle Scholar
Johnson, W., Cheng, Y., Van Rossum, M., Nicolet, M., Nucl. Inst. and Meth.. in Phys. Res. B 7/8, 657 (1985).10.1016/0168-583X(85)90450-1CrossRefGoogle Scholar
Tobbeche, S., Boukhari, A, Khalfaoui, R., Amokrane, A., Benazzouz, C., Guittoum, A., Nucl. Instr.. and Method in Phys. Res. B 269(24), 3242 (2011).10.1016/j.nimb.2011.04.089CrossRefGoogle Scholar