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Nanostructuration of Cr/Si layers induced by ion beam mixing
Published online by Cambridge University Press: 22 February 2013
Abstract
This work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.
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- Copyright © Materials Research Society 2013