Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:08:39.456Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoscale Study of the Hydrogenated Amorphous Silicon Surface

Published online by Cambridge University Press:  16 February 2011

D.M. Tanenbaum ,
A. Laracuente  and
A.C. Gallagher
D.M. Tanenbaum
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, Boulder, CO 80309–0440
A. Laracuente
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, Boulder, CO 80309–0440
A.C. Gallagher
Affiliation:
Staff member, Quantum Physics Division, National Institute of Standards and Technology, Boulder, CO 80309–0440
Get access

Abstract

A scanning tunneling microscope has been used to study the topology of the surface of device-quality, hydrogenated Amorphous silicon deposited by rf discharge from silane or “hot wire” CVD. The substrates were oxide-free single-crystal silicon or GaAs. Films studied were either grown in our laboratory and observed with no air exposure, or grown at other laboratories producing device-quality photovoltaic cells and viewed after air exposures of less than 30 Minutes. Thin films (10 nm) representing early growth stages appear significantly smoother than the thicker films. The topology of thick films (> 50 nm) has large variations over individual samples. While many regions can be characterized as “rolling hills”, atomically flat areas are sometimes observed nearby in our films. In most regions the observed slopes were 10% or less from the horizontal, but some steep-sided valleys, indicating incipient voids, are seen. Overall surface roughness measured on sub-Micron areas of our films is very inhomogeneous. Uniformity of the films grown off site was much better, although no atomically flat regions were observed, surface roughness can be estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 49
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Doughty, D. A., Doyle, J. R., Lin, G. H., and Gallagher, A., J. Appl. Phys. 67, 6220 (1990).Google Scholar
2. Knights, J. C., J. Non-Cryst. Solids 35/36, 159 (1980).Google Scholar
3. Mahan, A. H., Williamson, D. L., Nelson, B. P., and Crandall, R. S., Phys. Rev. B 40, 12024 (1989).Google Scholar
4. Li, Y. M., An, Ilsin, Nguyen, H. V., Wronslki, C. R., and Collins, R. W., Phys. Rev. Lett. 68, 2814 (1992).Google Scholar
5. Stutzin, G. C., Ostrom, R. M., Gallagher, A., and Tanenbaum, D. M., J. Appl. Phys. 74, 91 (1993).Google Scholar
6. Mahan, A. H., Carapella, J., Nelson, B. P., Crandall, R. S., and Balberg, I., J. Appl. Phys. 69, 6728 (1991)Google Scholar
7. Ostrom, R. M., Tanenbaum, D. M., and Gallagher, A., Appl‥ Phys. Lett. 61, 925, (1992).Google Scholar
8. Higashi, G. S., Becker, R. S., Chabal, Y. J., and Becker, A. J., Appl. Phys. Lett. 58, 1656, (1991).Google Scholar
9. Collins, R. W., Tuckerman, C. J., Huang, C. Y., and Windischmann, H., J. Vac. Sci. Technol. A 3, 2077, 1985.Google Scholar
10. Tsai, C., Li, K. H., Sarathy, J., Shih, S., Campbell, J. C., Hance, B. K., and White, J. M., Appl. Phys. Lett. 59, 2814, (1991).Google Scholar
11. Mahan, A. H., Chen, Y., Williamson, D. L., and Mooney, G. D., J. Non-Cryst. Solids 137–138, 65, (1991).CrossRefGoogle Scholar