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Nanoscale Structures by Laser Direct Writing in Silicon

Published online by Cambridge University Press:  15 February 2011

H. Dirac ,
M. Müllenborn  and
J. W. Petersen
H. Dirac
Affiliation:
Mikroelektronik Centret, Technical University of Denmark. Bldg. 345, DK-2800 Lyngby, Denmark
M. Müllenborn
Affiliation:
Mikroelektronik Centret, Technical University of Denmark. Bldg. 345, DK-2800 Lyngby, Denmark
J. W. Petersen
Affiliation:
Mikroelektronik Centret, Technical University of Denmark. Bldg. 345, DK-2800 Lyngby, Denmark
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Abstract

Laser-induced pyrolytic etching of silicon by chlorine has been used to process structures with nanoscale resolution. A direct write system has been designed, based on an Ar ion laser with a UV-option, on-axis optics, acousto-optic beam modulation, and high resolution translation stages for sample displacement and for focusing.

The resolution of the process is determined by the size of the melt generated by the focused laser beam. The melt size is a function of optical power, and resolutions better than the focused laser spot diameter are achieved by reducing the power onto the silicon sample. In this way we have etched trenches with a resolution better than 150 nm. We demonstrate feature sizes of about 40 nm by closely spacing etched trenches. The minimum width of these features is determined by the etch selectivity. The feature width depends on the trench geometry, line spacing, and on scan speed, due to heat flow confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 43
Copyright
Copyright © Materials Research Society 1995

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