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Nanoscale Properties of SrBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  21 March 2011

A. Gruverman ,
C. Isobe  and
M. Tanaka
A. Gruverman
Affiliation:
Sony Corporation, Yokohama Research Center, Hodogaya-ku, Yokohama 240-0005, Japan
C. Isobe
Affiliation:
Sony Corporation, Core Technology Development Center, Atsugi 243-0014, Japan
M. Tanaka
Affiliation:
Sony Corporation, Core Technology Development Center, Atsugi 243-0014, Japan
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Abstract

Piezoresponse scanning force microscopy (PFM) was applied to study the nanoscale mechanism of retention loss in SrBi2Ta2O9 (SBT) thin films. Experiments were conducted by performing local polarization reversal within an individual grain with subsequent imaging of a resulting domain structure at different time intervals. The retention behavior of the films was studied as a function of switching conditions and electrode material. SFM was also used for nanoscale mapping of leakage current sites and investigation of electrical conduction mechanism at these sites. For the first time, the development of dielectric breakdown in SBT films was directly observed at nanoscale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC8.5.1
Copyright
Copyright © Materials Research Society 2001

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