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Nano-Scale MOSFET Devices Fabricated Using a Novel Carbon-Nanotube-based Lithography

Published online by Cambridge University Press:  01 February 2011

Jaber Derakhshandeh ,
Yaser Abdi ,
Shams Mohajerzadeh ,
Mohammad Beikahmadi ,
Ashkan Behnam ,
Ezatollah Arzi ,
Michael D. Robertson  and
C. J. Bennett
Jaber Derakhshandeh
Affiliation:
[email protected] Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, IranElectrical & Computer Eng.TehranTehran14395/515Iran
Yaser Abdi
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, Iran, Electrical & Computer Eng., Tehran, Tehran, 14395/515, Iran
Shams Mohajerzadeh
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehr an, Iran, Electrical & Computer Eng., Tehran, Tehran, 14395/515, Iran
Mohammad Beikahmadi
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, Iran, Electrical & Computer Eng., Tehran, Tehran, 14395/515, Iran
Ashkan Behnam
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, Iran, Electrical & Computer Eng., Tehran, Tehran, 14395/515, Iran
Ezatollah Arzi
Affiliation:
[email protected], University of Tehran, Tehran, Iran, Department of Physics, Tehran, Tehran, 14395/515, Iran
Michael D. Robertson
Affiliation:
[email protected], Acadia University, Department of Physics, Wolfville, Nova Scotia, B4P 2R6, Canada
C. J. Bennett
Affiliation:
[email protected], Acadia University, Department of Physics, Wolfville, Nova Scotia, B4P 2R6, Canada
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Abstract

PECVD-grown carbon nanotubes on (100) silicon substrates have been studied and exploited for electron emission applications. The growth of CNT's is achieved by a mixture of hydrogen and acetylene gases in a CVD reactor and a 2-5nm thick nickel is used as the seed for the growth. The presence of DC-plasma yields a vertical growth and allows deposition at temperatures below 650°C. The grown nano-tubes are encapsulated by means of an insulating TiO2 layer, leading to beam-shape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode-cathode voltage of 100 V with ability of direct writing on a photo-resist coated substrates. Straight lines with widths between 50 and 200nm have been successfully drawn. Scanning electron and transmission electron microscopy have been used to investigate the quality and fineness of the results. This technique has been applied on P-type (100) silicon substrates for the formation of the gate region of N-MOSFET devices, showing a drive current of 310μA/μm and Cox of 0.7μF/cm2.

Keywords

nanostructuredeviceslithography (removal)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D04-07
Copyright
Copyright © Materials Research Society 2006

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