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Nanoscale Investigation of Polarization Retention Loss in Ferroelectric Thin Films VIA Scanning Force Microscopy

Published online by Cambridge University Press:  10 February 2011

A. Gruverman ,
S. A. Prakash ,
S. Aggarwal ,
R. Ramesh ,
O. Auciello  and
H. Tokumoto
A. Gruverman
Affiliation:
Joint Research Center for Atom Technology (JRCAT), Tsukuba, Ibaraki 305, Japan
S. A. Prakash
Affiliation:
Dept. of Materials Engineering, University of Maryland, College Park, MD 20742
S. Aggarwal
Affiliation:
Dept. of Materials Engineering, University of Maryland, College Park, MD 20742
R. Ramesh
Affiliation:
Dept. of Materials Engineering, University of Maryland, College Park, MD 20742
O. Auciello
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439-4838
H. Tokumoto
Affiliation:
JRCAT-NAIR, Tsukuba, Ibaraki 305, Japan.
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Abstract

Scanning force microscopy (SFM) was applied to direct nanoscale investigation of the mechanism of retention loss in ferroelectric thin films. Experiments were conducted by performing local polarization reversal within an individual grain with subsequent imaging of a resulting domain structure at various time intervals. A conductive SFM tip was used for domain switching and imaging in the SFM piezoresponse mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 53
Copyright
Copyright © Materials Research Society 1998

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References

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