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Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers

Published online by Cambridge University Press:  10 February 2011

F. A. Ponce ,
W. T. Young ,
D. Cherns ,
J. W. Steeds  and
S. Nakamura
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
W. T. Young
Affiliation:
University of Bristol, H. H. Wills Physics Laboratory, Bristol BS8 1TL, UK
D. Cherns
Affiliation:
University of Bristol, H. H. Wills Physics Laboratory, Bristol BS8 1TL, UK
J. W. Steeds
Affiliation:
University of Bristol, H. H. Wills Physics Laboratory, Bristol BS8 1TL, UK
S. Nakamura
Affiliation:
Nichia Chemical Industries, 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the <0001> direction. and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors <0001>. The other type of observed defects consist of inversion domains with [0001 ] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 405
Copyright
Copyright © Materials Research Society 1997

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References

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