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Nanometer-Scale Oxide Particles in Gesi Films Grown by WetOxidation

Published online by Cambridge University Press:  15 February 2011

Tan-Chen Lee ,
Robert J. Soave ,
Yosi Y. Shacham-Diamand  and
John Silcox
Tan-Chen Lee
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Robert J. Soave
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Yosi Y. Shacham-Diamand
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, NY 14853
John Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Abstract

Amorphous GeSi films with different thicknesses and oxygen contents wereelectron beam evaporated onto Si (KK)) wafers and wet oxidized at 900 °C for30 Min. If there was no oxygen in the as-deposited film, an epitaxial GeSifilm would be grown after wet oxidation. For the samples with oxygen,epitaxial growth broke down when the thickness of the epitaxy exceeded about200 A and polycrystalline GeSi films were formed. A dedicated STEM (scanningtransmission electron Microscope) was used to characterize the sample afteroxidation. STEM BF (bright field), ADF (annular dark field), and energyfiltered images revealed the presence of small oxide particles in thepolycrystalline GeSi films. X-ray microprobe analysis with a windowlessdetector was employed to identify the oxide particles. The failure of theepitaxy is explained by the random nucleation and growth of GeSi grains onthe oxide particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 615
Copyright
Copyright © Materials Research Society 1994

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References

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