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Nanometer Scale Composition Variations in Ge Quantum Dots on Si(100)

Published online by Cambridge University Press:  01 February 2011

Yangting Zhang ,
Margaret Floyd ,
Jeff Drucker ,
P.A. Crozier ,
David J. Smith  and
K.P. Driver
Yangting Zhang
Affiliation:
Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ 85287-1504, U.S.A.
Margaret Floyd
Affiliation:
Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ 85287-1504, U.S.A.
Jeff Drucker
Affiliation:
Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ 85287-1504, U.S.A.
P.A. Crozier
Affiliation:
Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ 85287-1504, U.S.A.
David J. Smith
Affiliation:
Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ 85287-1504, U.S.A.
K.P. Driver
Affiliation:
Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292 U.S.A.
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Abstract

Electron-energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) was used to measure nm-scale composition variations in Ge/Si(100) islands grown by molecular beam epitaxy (MBE) at substrate temperatures 400°C ≤T ≤700°C and a growth rate of 1.4 ML/min (1 monolayer, ML=6.78x1014 atoms / cm2). These measurements were correlated with island ensemble morphology determined by atomic force microscopy (AFM). The average Si concentration of the islands and Si/Ge interface width increased monotonically with growth temperature. Integrated island volumes measured by AFM were proportional to the equivalent Ge coverage, øGe, with slopes greater than one for the higher deposition temperatures. This result confirms that the islands grow faster than the Ge deposition rate. Linear behavior of the island volume vs. øGe curves implies that the average Ge composition is independent of island size. The volume at which islands change shape from pyramids to domes correlates well with the average Ge content of the islands in the context of simple strain-scaling arguments. For T=700°C, rapid Si interdiffusion precludes formation of pure Ge pyramids for growth at 1.4 ML/min. Growth at 4.8 ML/min kinetically stabilizes pure Ge pyramid clusters, allowing their formation prior to Si interdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R10.5
Copyright
Copyright © Materials Research Society 2002

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References

[1] Chaparro, S., Drucker, J., Yangting, Z., Chandrasekhar, D., McCartney, M. and Smith, D. J., Phys. Rev. Lett. 83, 1199 (1999).Google Scholar
[2] Chaparro, S.A., Zhang, Y., Drucker, J., Chandrasekhar, D., and Smith, D. J., J. Appl. Phys. 87, 2245 (2000).Google Scholar
[3] Liao, X.Z., Zou, J., Cockayne, D.J.H., Jiang, Z.M., Wang, X., Leon, R., Appl. Phys. Lett. 77, 1305 (2000).Google Scholar
[4] Magidson, V., Regelman, D.V., Beserman, R., and Dettmer, K., Appl. Phys. Lett. 73, 1044 (1998).Google Scholar
[5] Capellini, G., Seta, M. De, and Evangelisti, F., Appl. Phys. Lett., 78, 303 (2001).Google Scholar
[6] Drucker, J., Zhang, Y., Chaparro, S., Chandrasekhar, D., McCartney, M. and Smith, D. J., Surf. Rev. Lett. 7, 527 (2000).Google Scholar
[7] Mo, Y.W., Savage, D.E., Swartzentruber, B.S., and Lagally, M.G., Phys. Rev. Lett. 65, 1020 (1990).Google Scholar
[8] Medeiros-Ribeiro, G., Kamins, T.I., Ohlberg, D.A.A., and Williams, R.S., Phys. Rev. B 58, 3533 (1998).Google Scholar
[9] Tomitori, M., Watanabe, K., Kobayashi, M., and Nishikawa, O., Appl. Surf. Sci. 76/77, 322 (1994).Google Scholar
[10] Medeiros-Ribeiro, G., Bratkovski, A.M., and Williams, R.S., Science 279, 353 (1998).Google Scholar
[11] Krishnamurthy, Mohan, Drucker, J. S., and Venables, J. A., J. Appl. Phys. 69 (9), 6461 (1991).Google Scholar