Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-10T20:40:02.466Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanolayer Reactions in Aluminum-Metal Interfaces

Published online by Cambridge University Press:  25 February 2011

E. V. Barrera ,
M. W. Ruckman  and
S. M. Heald
E. V. Barrera
Affiliation:
Division of Materials Science, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973
M. W. Ruckman
Affiliation:
Division of Materials Science, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973
S. M. Heald
Affiliation:
Division of Materials Science, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973
Get access

Abstract

Surface extended x-ray absorption fine structure (SEXAFS) measurements on the nanometer level were made for AI/M interfaces where M was Cu or Ni. The samples were studied immediately after deposition and after heat treatments. Significant differences in interface reactions were observed depending on deposition direction (Cu on Al or Al on Cu) and the amount of mixing was also related to whether M was Cu or Ni. The SEXAFS measurements revealed that there were no detectable amounts of C or O present. One percent Zn was observed to be in the Al layers. The results obtained from the as-deposited interfaces correlate well with data obtained from buried interfaces of like element combinations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 69
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Heald, S. M., Chen, H., and Tranquada, J. M., Glancing-angle extended x-ray absorption fine structure and reflectivity studies of interfacial regions, Phys. Rev. B 38, 1016–26 (1988).Google Scholar
2. Chen, H., Studies of Cu-Al interfaces using glancing angle x-ray reflectivity and EXAFS, Ph.D. Dissertation, The City University of New York, 1989.Google Scholar
3. Chen, H. and Heald, S. M., Glancing angle EXAFS studies of interfacial reactions: An application to Cu-Al thin films, Solid State Ionics 32/33, 924–9 (1989).Google Scholar
4. DiMarzio, D., Chen, H., Ruckman, M. W., and Heald, S. M., Photoemission and glancing-angle extended x-ray absorption fine structure studies of vacuum-deposited Al/Cu bilayers, J. Vac. Sci. Technol. A7 (3), 1549–53 (1989).Google Scholar
5. Ruckman, M. W., Jiang, L., and Strongin, Myron, Room temperature reaction between polycrystalline Ni/Al bilayers deposited in ultrahigh vacuum, J. Vac. Sci. Technol. A, in press.Google Scholar
6. Citrin, P. H., An overview of SEXAFS during the past decade, J. de Phys. C8 (12), 437 (1986).Google Scholar
7. Heald, S. M. and Barrera, E. V., X-ray reflectivity and absorption study of Ni/Al reactions: The role of 0 impurities, submitted to March 1990 Meeting of the American Physical Society.Google Scholar