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Nano-laminating of SiO2 and TiO2: Atomic layer deposition as a tool to gain new insight into interfaces

Published online by Cambridge University Press:  01 June 2015

Nicolas Sobel  and
Christian Hess
Nicolas Sobel
Affiliation:
Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Str. 8, 64287 Darmstadt, Germany
Christian Hess*
Affiliation:
Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Str. 8, 64287 Darmstadt, Germany
*
*[email protected]
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Abstract

Atomic layer deposition (ALD) was used to deposit a laminate structure of alternating SiO2 and TiO2 monolayers onto a Si wafer. The resulting samples were analyzed in detail by X-ray photoelectron spectroscopy (XPS) revealing a distinct O 1s signature due to the presence of Si-O-Ti species. These findings are in good agreement with those reported for thin ALD films of TiO2 grown on SiO2.

Keywords

atomic layer depositionnanoscalex-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2118320
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

George, S. M., Chem. Rev. 110, 111–131 (2010).CrossRefGoogle Scholar
Lee, B., Hande, A., Park, T. J., Chung, K. J., Ahn, J., Rousseau, M., Hong, D., Li, H., Liu, X., Shenai, D. and Kim, J., Microelectr. Eng. 88, 3385–3388 (2011).CrossRefGoogle Scholar
Wu, Y., Potts, S. E., Hermkens, P. M., Knoops, H. C. M., Roozeboom, F. and Kessels, W. M. M., Chem. Mater. 25, 4619−4622 (2013).CrossRefGoogle Scholar
Chaaya, A. A., Viter, R., Baleviciute, I., Bechelany, M., Ramanavicius, A., Gertnere, Z., Erts, D., Smyntyna, V. and Miele, P., J. Phys. Chem. C 118, 3811−3819 (2014).CrossRefGoogle Scholar
Lotfian, S., Mayer, C., Chawla, N., Llorce, J., Misra, A., Baldwin, J. K. and Molina-Aldareguía, J. M., Thin Solid Films 571, 260–267 (2014).CrossRefGoogle Scholar
Lassaletta, G., Fernández, A., Espinós, J. P. and González-Elipe, A. R., J. Phys. Chem. 99, 1484–1490 (1995).CrossRefGoogle Scholar
Methaapanon, R. and Bent, S. F., J. Phys. Chem. C, 114, No. 23, (2010).CrossRefGoogle Scholar
Hess, C. in Nanostructured Catalysts: Selective Oxidations, edited by Hess, C. and Schlögl, R., (RSC Nanoscience & Nanotechnology No. 19, Cambridge, 2011) pp. 327–328.CrossRefGoogle Scholar
Sobel, N., Hess, C., Lukas, M., Spende, A., Stühn, B., Toimil-Molares, M. E. and Trautmann, C., Beilstein J. Nanotechnol. 6, 472–479 (2015).CrossRefGoogle Scholar
Du, Y., Du, X. and George, S. M., Thin Solid Films 491, 43–53 (2005).CrossRefGoogle Scholar
Nottbohm, C. T. and Hess, C., Catal. Commun. 22, 39–42 (2012).CrossRefGoogle Scholar
Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A. and Yarmoff, J. A., Phys. Rev. B 38, 6084–6096 (1988).CrossRefGoogle Scholar
Mayer, J. T., Diebold, U., Madey, T. E. and Garfunkel, E., J. Electron. Spectrosc. Rel. Phenom. 73, 1–11 (1995).CrossRefGoogle Scholar