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Nanofabrication of Vertically Aligned Carbon Nanofibers for Contact Characterization

Published online by Cambridge University Press:  01 February 2011

Yusuke Ominami ,
Quoc Ngo ,
Makoto Suzuki ,
Kevin Mcilwrath ,
Konrad Jarausch ,
Alan M Cassell ,
Jun Li  and
Cary Y Yang
Yusuke Ominami
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States, 408-554-6817
Quoc Ngo
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States
Makoto Suzuki
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States
Kevin Mcilwrath
Affiliation:
[email protected], Hitachi High Technologies America, Pleasanton, CA, 94588, United States
Konrad Jarausch
Affiliation:
[email protected], Hitachi High Technologies America, Pleasanton, CA, 94588, United States
Alan M Cassell
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Moffett Field, CA, 94035, United States
Jun Li
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Moffett Field, CA, 94035, United States
Cary Y Yang
Affiliation:
[email protected], Santa Clara University, Center for Nanostructures, 500 El Camino Real, Santa Clara, CA, 95053, United States
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Abstract

Recent studies in nanostructural characterization for on-chip interconnect applications using carbon nanofibers (CNFs) are presented. In this paper, we propose a novel technique, for the purpose of characterizing interfacial structures of vertically aligned CNFs for cross-sectional imaging with scanning transmission electron microscopy (STEM). In this technique, vertically aligned CNFs are selectively grown, by plasma-enhanced chemical vapor deposition (PECVD), on a substrate comprising a narrow strip (width ~100nm) fabricated by focused ion beam (FIB). Using high-resolution STEM, we show that CNFs with diameters ranging from 10 -100 nm exhibit very similar graphitic layer morphologies at the base contact interface.

Keywords

scanning transmission electron microscopy (STEM)ion-beam processingnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 921: Symposium T – Nanomanufacturing , 2006 , 0921-T05-04
Copyright
Copyright © Materials Research Society 2006

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References

[1] Martel, R., Schmidt, T., Shea, H. R., Hertel, T. and Avouris, Ph., Appl. Phys. Lett. 73, 2447 (1998)Google Scholar
[2] Kreupl, F., Graham, A. P., Duesberg, G. S., Steinhogl, W., Liebau, M., Unger, U. and Honlein, W., Microelectron. Eng. 64, 399 (2002)Google Scholar
[3] Li, J., Stevens, R., Delzeit, L., Ng, H. T., Cassell, A., Han, J., and Meyyappan, M., Appl. Phys. Lett. 81, 910 (2002)Google Scholar
[4] Li, J., Ye, Q., Cassell, A., Ng, H. T., Stevens, R., Han, J., and Meyyappan, M., Appl. Phys. Lett. 82, 2491 (2003)Google Scholar
[5] Cui, H., Yang, X., Simpson, M., Lowndes, D., and Varela, M., Appl. Phys. Lett. 84, 4077 (2004)Google Scholar
[6] Ominami, Y., Ngo, Q., Austin, A. J., Yoong, H., Cassell, A. M., Cruden, B. A., Li, J., Meyyappan, M., and Yang, C. Y., Appl. Phys. Lett. 87, 233105 (2005)Google Scholar
[7] Kato, N. I., J. Electron. Microsc. 53, 451 (2004)Google Scholar
[8] Cruden, B. A., Cassell, A. M., Ye, Q. and Meyyappan, M., J. Appl. Phys. 94, 4070 (2003)Google Scholar
[9] Merkulov, V. I., Guillorn, M. A., Lowndes, D. H., and Simpson, M. L., Appl. Phys. Lett. 79, 1178 (2001)Google Scholar
[10] Merkulov, V. I., Lowndes, D. H., Wei, Y. Y., Eres, G. and Voelkl, E., Appl. Phys. Lett. 76, 3555 (2000)Google Scholar
[11] Ge, S., Jiang, K., Lu, X., Chen, Y., Wang, R., and Fan, S., Adv. Mater. 17, 56 (2005)Google Scholar