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Nanofabrication of Materials with a Scanning Tunneling Microscope

Published online by Cambridge University Press:  21 February 2011

Seiichi Kondo ,
Seiji Geike ,
Mark Lutwyche  and
Yasuo Wada
Seiichi Kondo
Affiliation:
Advanced Research Laboratory, Hitachi, Ltd., Hatoyama Saitama 350–03 Japan
Seiji Geike
Affiliation:
Advanced Research Laboratory, Hitachi, Ltd., Hatoyama Saitama 350–03 Japan
Mark Lutwyche
Affiliation:
Advanced Research Laboratory, Hitachi, Ltd., Hatoyama Saitama 350–03 Japan
Yasuo Wada
Affiliation:
Advanced Research Laboratory, Hitachi, Ltd., Hatoyama Saitama 350–03 Japan
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Abstract

The mechanism of nanofabrication with a scanning tunneling microscope (STM) is investigated. We report experiments both in ultra-high vacuum (UHV) and in air, using several kinds of materials to understand the mechanism systematically. Threshold bias voltages, which are defined as the voltages above which etching is possible under the STM tip, have a linear dependence on the binding energies of the materials. Therefore, the STM nanofabrication mechanism is attributed to the local sublimation of surface atoms induced by tunneling electrons (SITE: Sublimation Induced by Tunneling Electrons). It is also ascribed to the oxidation process by adsorbed water for nanofabrication in air (CRITE: Chemical Reaction Induced by Tunneling Electrons).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 191
Copyright
Copyright © Materials Research Society 1995

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References

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