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Nanocluster Epitaxy by Annealing: Ag on H-terminated Si (111) Surfaces

Published online by Cambridge University Press:  11 February 2011

B.Q. Li ,
Y.F. Shi ,
J. Bording  and
J.M. Zuo
B.Q. Li
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Y.F. Shi
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J. Bording
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J.M. Zuo
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

We report an experimental investigation on the morphology and orientation of Ag nanoclusters by RT deposition and subsequent annealing. We show that epitaxial Ag clusters of 2 ∼ 6 nm in diameter can be synthesized in this way. The RT self-assembled Ag clusters grow as mostly single-crystal crystallites with Ag(111)//Si(111), but the in-plane orientation has a dispersion of ∼ 9° centering at Si[110] direction. Upon annealing, the Ag clusters drastically rotated to the epitaxial configuration with the in-plane orientation aligned to the Ag[110] //Si[110] direction. The rotation and epitaxy of the Ag nanoclusters are explained based on a coincident site lattice model and interface energy minimization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W2.10
Copyright
Copyright © Materials Research Society 2003

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References

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