Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-27T01:24:54.925Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers

Published online by Cambridge University Press:  01 February 2011

Mahfoudh Raïssi ,
Gabrielle Regula ,
Chokri Hadj Belgacem ,
Cyril Coudreau ,
Serge Nitsche ,
Maryse Lancin ,
Bernhard Holländer ,
Florent Robert ,
Mustapha Fnaiech  and
Esidor Ntsoenzok
...Show all authors
Mahfoudh Raïssi
Affiliation:
[email protected], Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913 Marseille 13 288, France
Gabrielle Regula
Affiliation:
[email protected], Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122, CNRS, Escadrille Normandie Niemen, case 262, Marseille, 13 397, France
Chokri Hadj Belgacem
Affiliation:
[email protected], University of Monastir, URPS, Department of Physics, Avenue de l'Environnement, Monastir, 5 019, Tunisia
Cyril Coudreau
Affiliation:
[email protected], Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913, Marseille, 13 288, France
Serge Nitsche
Affiliation:
[email protected], Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913, Marseille, 13 288, France
Maryse Lancin
Affiliation:
[email protected], Paul Cézanne University, Aix-Marseille III, TECSEN, UMR 6122, CNRS, Escadrille Normandie Niemen, case 262, Marseille, 13 397, France
Bernhard Holländer
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, Institute of Bio- and Nanosystems, Semiconductor Thin Films and Device, Ion Technology Division, Jülich, 52 425, Germany
Florent Robert
Affiliation:
[email protected], Montpellier University, LAMMI, UMR CNRS 5072, CC15, Place E. Bataillon, Montpellier, 34 095, France
Mustapha Fnaiech
Affiliation:
[email protected], University of Monastir, URPS, Department of Physics, Avenue de l'Environnement, Monastir, 5 019, Tunisia
Esidor Ntsoenzok
Affiliation:
[email protected], Orléans University, CERI-CNRS, 3A Rue de la Férollerie, Orléans, 45 071, France
Jean-Louis Lazzari
Affiliation:
[email protected], Méditerranée and Paul Cézanne Universities, CRMC-N, UPR-CNRS 7251, Luminy Campus Case 913, Marseille, 13 288, France
Get access

Abstract

To weight the importance of a nanocavity buffer in a SiGe deposition substrate, some P type (001) FZ Si wafers are implanted (A samples) or not (B samples) at room temperature with 5×1016 He+ cm–2 at 10keV. They are annealed at 700°C for one hour to form a nanocavity layer close to the Si surface. Then, the wafers are carefully chemically cleaned in a clean room to remove both organic and metallic impurities from the surface. They are coated either by 210 nm (A) or 430 nm (B) Si1−xGex (x=0.20±0.02) alloy grown at 575°C for 0.42 hour by low pressure chemical vapor deposition (LP-CVD) with a growth rate of 8 to 17 nm.mn−1. Both kinds of samples are studied by cross section transmission electron microscopy, X-rays diffraction, Rutherford backscattering, atomic force microscopy and etch pit counts. The association of these techniques demonstrates that the thin SiGe layer which is deposited on sample A is fully relaxed and that the threading dislocation density (estimated to hardly reach 4×103cm−2) is at least one order of magnitude lower than what is obtained so far using ion implantation assistance in SiGe layer growth on Silicon. The roughness of the SiGe surface is low enough to stand a further Si epitaxy. Nevertheless, the mechanism involved responsible for the threading dislocation annihilation and/or confinement is still unclear.

Keywords

ion-implantationchemical vapor deposition (CVD) (chemical reaction)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-08
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gruhle, A., Schuppen, A., Thin Solid Films 294, 246 (1997).Google Scholar
2. Crabbe, E. F., Meyerson, B. S., Stork, J. M. C., Harame, D. L., IEDM Tech. Digest, p.83 (1993).Google Scholar
3. Harame, D. L., Comfort, J. H., Cressler, J. D., Crabbe, E. F., Sun, J. Y.-C., Meyerson, B. S., Tice, T., IEEE Trans. Electron Devices 42, 455 (1995).Google Scholar
4. Harame, D. L., Comfort, J. H., Cressler, J. D., Crabbe, E. F., Sun, J. Y.-C., Meyerson, B. S. et al.,IEEE Trans. Electron Devices 42, 469 (1995).Google Scholar
5. Murota, J., Ono, S., Jpn. J. Appl. Phys. 33 (4B), 2290 (1994).Google Scholar
6. Ismail, K., Nelson, S. F., Chu, J. O., Meyerson, B. S., Appl. Phys. Lett. 63,660 (1993).Google Scholar
7. Vogelsang, T. H., Hoffman, K.R., Appl. Phys. Lett. 63, 2, 186 (1993).Google Scholar
8. Chern, C. H., Tigero, J. M. G., Wang, K. L., Wang, S. J., J. Vac. Sci. Technol. B 10, 937 (1993).Google Scholar
9. People, R., Bean, J. C., Bethea, C. G., Sputz, S. K., L. J. Peticolas, Appl. Phys. Lett. 61, 1122(1991).Google Scholar
10. Tang, Y. S., Ni, W. X., Torres, C. M. Sotomayor, Hansson, G. V., Electron. Lett. 31, 1385.(1995).Google Scholar
11. Bozzo, S., Lazzari, J.-L., Hollaender, B., Coudreau, C., Ronda, A., Mantl, S., D'Avitaya, F. A., Derrien, J., Appl. Surface Science 164, 35–41(2000).Google Scholar
12. Zheng, X. H., Chen, H., Li, Y. K., Huang, Q., Zhou, J. M., J. Cryst. Growth 264, 104–109 (2004).Google Scholar
13. Chen, H., Guo, L. W., Cui, Q., Hu, Q., Hung, Q., Zhou, J. M., J. Appl. Phys. 79, 2 (1996).Google Scholar
14. Vescan, L., Wickenhäuser, S., Solid-State Electronics 48, 1279–1284 (2004).Google Scholar
15. Hollaender, B., Lenk, St., Trinkaus, H., Kirch, D., Luysberg, M., Hachbarth, T., Herzog, H.-J., Fishnet, P. F. P, Nucl. Instr. and Meth. in Phys. Research B 175-177, 375–376 (2001).Google Scholar
16. Bozzo, S., Lazzari, J.-L., Coudreau, C., Ronda, A., Arnaud D'Avitaya, F., Derrien, J., Mesters, S., Hollaender, B., Gergaud, P., Thomas, O., J. Cryst. Growth 216, 171–184 (2000).Google Scholar
17. Thanh, Vinh Le, Bouchier, D., and Hincelin, G., J. Appl. Phys. 87, 8, 3700–3706 (2000).Google Scholar
18. Schimmel, D. G., J. Electrochem. Soc. 133, 734 (1976).Google Scholar
19. Tang, H. P., Vescan, L., Dieker, C., Schmidt, K., Lüth, H., Li, H. D., J. Cryst. Growth 125, 301 (1992).Google Scholar
20. Lazzari, J.-L., Fouillant, C., Grunberg, P., Leclercq, J.-L., Joullié, A., Schiller, C., J. Cryst. Growth 130, 96–100 (1993).Google Scholar