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Nanoalloyed Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 Multilayers

Published online by Cambridge University Press:  11 August 2011

M. Winkler ,
Jan D. Koenig ,
S. Buller ,
U. Schuermann ,
L. Kienle ,
W. Bensch  and
H. Boettner
M. Winkler
Affiliation:
Fraunhofer-Institute for Physical Measurement Techniques IPM, Thermoelectric Systems, Heidenhofstraße 8, 79110 Freiburg, Germany
Jan D. Koenig
Affiliation:
Fraunhofer-Institute for Physical Measurement Techniques IPM, Thermoelectric Systems, Heidenhofstraße 8, 79110 Freiburg, Germany
S. Buller
Affiliation:
Institute of Inorganic Chemistry, Christian-Albrechts-Universität zu Kiel, Max-Eyth-Str. 2, 24118 Kiel, Germany
U. Schuermann
Affiliation:
Synthesis and Real Structure, Institute for Materials Science, Christian-Albrechts-Universität zu Kiel, Kaiserstr. 2, 24143 Kiel, Germany
L. Kienle
Affiliation:
Synthesis and Real Structure, Institute for Materials Science, Christian-Albrechts-Universität zu Kiel, Kaiserstr. 2, 24143 Kiel, Germany
W. Bensch
Affiliation:
Institute of Inorganic Chemistry, Christian-Albrechts-Universität zu Kiel, Max-Eyth-Str. 2, 24118 Kiel, Germany
H. Boettner
Affiliation:
Fraunhofer-Institute for Physical Measurement Techniques IPM, Thermoelectric Systems, Heidenhofstraße 8, 79110 Freiburg, Germany
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Abstract

In this work, thin films of Bi2Te3 and Sb2Te3 were synthesized by the nanoalloying approach: Nanoscale layers of the elements Element nanoscale layers of Bi, Sb and Te are stoichiometrically deposited on a cold substrate using a MBE setup and subjected to an annealing process in which a solid state reaction yielding Bi2Te3 and Sb2Te3 takes place. Besides the two binary compounds, nanoscale multilayer (ML) stacks of 9 nm Bi2Te3/9 nm Sb2Te3 were created. The electrical transport properties of the binary compounds were determined in dependence of composition. Compound formation was directly observed in temperature-dependent in-situ XRD scans and was found to start at ∼100 °C. The stability of the Bi2Te3/Sb2Te3 ML nanostructure against temperature-driven interdiffusion during annealing was examined by SIMS and TEM for an annealing temperature of 150 and 250 °C, respectively. A comparative TEM study of the as grown and annealed state is presented.

Keywords

thermoelectricthin filmnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1329: Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices , 2011 , mrss11-1329-i10-15
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Dresselhaus, M.S., Chen, G., Tang, M.Y., Yang, R., Lee, H., Wang, D., Ren, Z., Fleurial, J.-P., and Gogna, P., Adv. Mater. 19, 1043 (2007)Google Scholar
[2] Venkatasubramanian, R., Siivola, E., Colpitts, T. & O’Quinn, B.., Nature 413, 597 (2001)Google Scholar
[3] König, J.D., Böttner, H., Tomforde, J. et al. , Proceedings of 26th international Conference on Thermoelectrics, Korea, 395 (2007)Google Scholar
[4] Johnson, D.C., Current Opinion in Solid State & Materials Science 3, 159 (1996)Google Scholar
[5] Harris, F.R., Standridge, S., Feik, C., and Johnson, D.C.. , Angew. Chem. Int. Engl 42, 5295 (2003)Google Scholar
[6] König, J.D., Winkler, M., Buller, S., Bensch, W., Schuermann, U., Kienle, L., Böttner, H., to be published in Journal of Electronic Materials, Special Issue: International Conference on Thermoelectrics 2010, (2011)Google Scholar
[7] Böttner, H., Schubert, A., Kölbel, H., Gavrikov, A., Mahlke, A., Nurnus, J., Proceedings of the 23rd International Conference on Thermoelectrics (ICT) 2004, Adelaide, Australia, 114 (2004)Google Scholar
[8] Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., El-Masry, N., Journal of Crystal Growth 170, 817 (1997)Google Scholar
[9] Winkler, M., König, Jan D., Buller, S., Schürmann, U., Kienle, L., Bensch, W., Böttner, H., Proceedings of 8th European Conference on Thermoelectrics, Como, Italy, 19 (2010)Google Scholar
[10] Ioffe, A.F., Physics of Semiconductors, Infosearch London, 307 (1960)Google Scholar
[11] Brebrick, R.F., J. Phys. Chem. Solids 30, 719 (1969)Google Scholar
[12] Peranio, N., Winkler, M., Bessas, D., Aabdin, Z., König, J., Böttner, H., Hermann, R., Eibl, O., to be published Google Scholar
[13] Bos, J.W. G., Zandbergen, H.W., Lee, M.-H., Ong, N.P., and Cava, R. J., Phys. Rev. B. 75, 195203 (2007)Google Scholar
[14] Taylor, A., Mortensen, C., Rostek, R., Nguyen, N., Johnson, D. C., Journal of Electronic Materials, Special Issue: International Conference on Thermoelectrics 2009, 1981 (2009)Google Scholar
[15] Nurnus, J., Böttner, H., Beyer, H., Lambrecht, A., Proceedings of 18th International Conference on Thermoelectrics, USA, 696 (1999)Google Scholar
[16] Rowe, D.M., CRC Handbook of Thermoelectrics, CRC Press, 48-7, (2006)Google Scholar
[17] Abrikosov, N.H., Bankina, V.F., Poretskaya, L.V., Shelimova, L.E. and Skudnova, E.V., Semiconducting II-VI, IV-VI, and V-VI Compounds, Plenum Press, New York, 165 (1969)Google Scholar
[18] Venkatasubramanian, R., Colpitts, T., O´Quinn, B., Liu, S., El-Masry, N., Lamvik, M., Appl. Phys. Lett. 75, 1104 (1999)Google Scholar
[19] Rowe, D.M., CRC Handbook of Thermoelectrics, CRC press, chap. 19 (1995)Google Scholar
[20] Böttner, H., Chen, G., Venkatasubramanian, R., MRS Bulletin 31, 211 (2006)Google Scholar