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Nano Crystalline Silicon Film Serves as the Emission Material for the Field Emission Pressure Sensor

Published online by Cambridge University Press:  17 March 2011

Liao Bo
Liao Bo*
Affiliation:
Electronics Engineering Depart., Beijing Institute of Technology, Beijing, 100081, China
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Abstract

The prototype of a field-emission pressure sensor with a novel structure based on the quantum tunnel effect is designed and manufactured. Moreover the nano crystalline silicon film technology is introduced into the fabrication of the device effectively, which performs the function mostly as the field-emission material, the device field-emission characteristic of the nano silicon film is investigated, the experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5A/m2, when the exterior electric field is 5.6×105V/m.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D17.4.1
Copyright
Copyright © Materials Research Society 2001

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