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Multi-Step Rapid Thermal Annealing of Si-Implanted Gaas for Microwave Discrete Devices and Monolithic Integrated Circuits Fabrication

Published online by Cambridge University Press:  26 February 2011

Tan-Hua Yu ,
W. M. Kong ,
L. F. Lester ,
P. M. Smith ,
K. H. G. Duh  and
J. C. M. Hwang
Tan-Hua Yu
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
W. M. Kong
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
L. F. Lester
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
P. M. Smith
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
K. H. G. Duh
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
J. C. M. Hwang
Affiliation:
General Electric Company, Electronics Laboratory Syracuse, NY 13221
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Abstract

In this paper, we report a multi-step rapid thermal annealing process for microwave discrete devices and monolithic integrated circuits fabrication. 2” diameter undoped liquid encapsulated Czochralski GaAs wafers were implanted with 29 Si+ and annealed without capping using incoherent light from high intensity halogen lamps. The annealing was carried out in multiple temperature steps to achieve optimum damage removal and dopant activation. As a result, wafers implanted with mid 1012 cm−2 dose exhibited 85–90% activation efficiency for 100kV implant and nearly 100% activation for 300 kV implant. In comparison with single-stepannealed wafers, multi-step-annealed wafers showed not only higher activation efficiency, but also more uniform activation, higher electron mobility and better device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 417
Copyright
Copyright © Materials Research Society 1986

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References

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