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Multiple Pulse Irradiation Effects in Excimer Laser-InducedCrystallization of Amorphous Si Films

Published online by Cambridge University Press:  15 February 2011

H. J. Kim
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY
James S. Im
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY
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Abstract

We have experimentally Investigated the effects that are associated withMultiple-pulse irradiation in the excimer laser processing of thin Si filmson SiO2. Double-pulse irradiation experiments revealed results,which are consistent with that which is known from single-pulsecrystallization experiments, and these experiments confirm the applicabilityof the transformation scenarios, which were derived from singlepulse-induced crystallization experiments [1,2]. The results from theMultiple-pulse irradiation experiments clearly show that gradual andsubstantial grain enlargement can occur — and only occurs —when the irradiation energy density is close to but less than the level thatis required to melt the film completely. Based on these findings, we arguethat the grain enlargement effect is a near-complete melting phenomenon that is associated with polycrystalline Si films, andwe present a grain boundary melting model to account for this phenomenon. Abrief discussion on the apparent similarities and physical differencesbetween the observed phenomenon and the solid state grain growth processesis provided herein.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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