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Multiple Layer Sputter Deposition and Laser Annealing of Silicon Films

Published online by Cambridge University Press:  22 February 2011

W. W. Anderson ,
H. F. Mac Millan ,
J. S. Katzeff  and
M. Lopez
W. W. Anderson
Affiliation:
Lockheed Missiles and Space Company, Inc., Sunnyvale, CA 94086
H. F. Mac Millan
Affiliation:
Lockheed Missiles and Space Company, Inc., Sunnyvale, CA 94086
J. S. Katzeff
Affiliation:
Lockheed Missiles and Space Company, Inc., Sunnyvale, CA 94086
M. Lopez
Affiliation:
Lockheed Missiles and Space Company, Inc., Sunnyvale, CA 94086
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Abstract

The formation of single crystal multiple layers on silicon substrates with thicknesses in excess of 1 μm has been demonstrated to be a viable process. Film build-up is via repetitions of the steps (1) pre-deposition chemical cleaning of wafer, (2) magnetron sputter deposition of 0.3 pm thick amorphous Si, (3) interfacial mixing via 190 keV implantation of Si, and (4) film epitaxial crystallization via pulsed laser annealing. Doping has been demonstrated by both (1) P ion implantation and (2) P incorporation from PH3; included in the sputter gas ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 241
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Celler, G.K. et al. , Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J.F., Hess, L.D., and Sigmon, T.W. (Elsevier North Holland, Amsterdam, 1981) p. 435.Google Scholar
2.Lau, S.S., et al. Appl. Phys. Lett. 33, 130 (1978).Google Scholar
3.van der Leeden, G.A., et al. Laser and Electron-Beam Interactions with Solids, edited by Appleton, B.R. and Celler, G.K. (Elsevier Science Publishing Co.., New York, 1982) p. 221.Google Scholar
4.Wittmer, M., Roth, J. and Mayer, J.W., Thin Film Phenomenon-Interfaces and Interactions, edited by Baglin, J.E.E. and Poate, J.M. (The Electrochemical Soc., Princeton, 1978) p. 107.Google Scholar
5.Fogarassy, E., et al. Laser and Electron-Beam Interactions with Solids, edited by Appleton, B.R. and Celler, G.K. (Elsevier Science Publishing Company, New York, 1982) p. 553.Google Scholar
6.Fogarassy, E., et al. J. Appl. Phys. 53, 3261 (1982).Google Scholar
7.Sigmon, T.W. and Tseng, W.F., Thin Film Phenomena-Interfaces and Interactions edited by Baglin, J.E.E. and Poate, J.M. (The Electrochemical Soc., Princeton, 1978) p. 99.Google Scholar
8.Cullis, A.G., Weber, H.C. and Bailey, P., J. Phys. E - Scientific Instrum. 12, 688 (1979).Google Scholar
9.von Allmen, M. et al. Appl. Phys. Lett. 34, 82 (1979).Google Scholar
10.Jenkins, M.W., J. Electrochemical Soc. 124, 757 (1977).Google Scholar
11.Gibbons, J.F., Johnson, W.S., and Mylroie, S.W., Projected Range Statistics (Dowden, Hutchinson, and Ross, Inc., Stroundsburg, 1975).Google Scholar
12.Katzeff, J.S., Lopez, M. and Berger, D.R., Proc. 15th IEEE Photovoltaic Specialists Conf. (IEEENew York1981) p. 437.Google Scholar
13.White, C.W., et al. Appl. Phys. Lett. 33, 662 (1978).Google Scholar
14.White, C.W., et al. Radiation Effects 47, 37 (1980).Google Scholar
15.Thornton, J.A. and Hoffman, D.W., J. Vac. Sci. Technol. 18, 203 (1981).Google Scholar