Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-05T03:01:31.850Z Has data issue: false hasContentIssue false
  • English
  • Français

Multi-mode Mid-IR Silicon Raman Amplifiers

Published online by Cambridge University Press:  01 February 2011

Bahram Jalali ,
Varun Raghunathan  and
Robert R Rice
Bahram Jalali
Affiliation:
[email protected], University of California Los Angeles, Electrical Engineering department, 68-109 E-IV, 420 Westwood Plaza, Los Angeles, CA, 90095-1594, United States
Varun Raghunathan
Affiliation:
[email protected], University of California Los Angeles, Electrical Engineering department, 63-128 E-IV, 420 Westwood Plaza, Los Angeles, CA, 90095-1594, United States
Robert R Rice
Affiliation:
[email protected], Northrop Grumman Space Technology, One Space Park, Redondo Beach, CA, 90278, United States
Get access

Abstract

This paper discusses the prospects of silicon as a Mid-wave Infra-red Raman crystal. As a specific example of novel devices that can be realized, we introduce the concept of multi-mode silicon Raman amplifiers and their application in infrared image pre-amplification. The same technology also has application in incoherent beam combining.

Keywords

Sioptoelectroniclaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L11-01
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Barnes, N. et al, JOSA B, vol. 11, pp, 2422–2426 (1994).Google Scholar
2. Shori, R. K. et al, Proc. SPIE vol. 3929, pp. 216–221 (2000).Google Scholar
3. Pask, H. M., Progress in Quantum Electronics, vol. 27, pp. 3–56 (2003).Google Scholar
4. Boyraz, O. et. al., Opt. Express, 12, 5269–5273 (2004).Google Scholar
5. Rong, H. et. al., Nature, 725–728 (2005).Google Scholar
6. Raghunathan, V. et. al., CLEO, CMU1, Baltimore (2005).Google Scholar
7. Jones, R. et. al., Opt. Express, 13, 519–525 (2005).Google Scholar
8. Salzberg, C.D., Villa, J.J., Journ. Opt. Soc. Am., 47, 244 (1957).Google Scholar
9. “Properties of Silicon”, Ed. Ning, T.H., INSPEC, IEE New York, pp. 70–79, (1988).Google Scholar
10. Bloembergen, N., Phys. Rev. Lett. 13, 720 (1964).Google Scholar
11. Lallemand, P. and Bloembergen, N., Appl. Phys. Lett. 6, 210 (1965), P. Lallemand and N. Bloembergen, Appl. Phys. Lett. 6, 212 (1965).Google Scholar
12. Baek, S. H., and Roh, W. B., Opt. Lett. 29, 153 (2004).Google Scholar
13. Soldana, L.B. and Pennings, E.C.M., IEEE Journ. of light. tech. 13, 615 (1995).Google Scholar
14. Baker, H. J., Lee, J. R. and Hall, D. R., Opt. Express 10, 297–302 (2002).Google Scholar
15. Dimitropoulos, D. et. al., Opt. Lett. 28, 1954 (2003).Google Scholar
16. Siegman, A.E., “How to (may be) measure laser beam quality,” Tutorial OSA annual meeting (1997).Google Scholar
17. Salisbury, M.S., et. al, Opt. Engg. 33, 4023–4032 (1994).Google Scholar
18. Calmes, L.K. et. al., Proc. SPIE 3382, 57 (1998).Google Scholar