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Multimillion-Atom Simulations of Atomic-Level Surface Stresses and Pressure Distribution on InAs/GaAs Mesas

Published online by Cambridge University Press:  10 February 2011

Xiaotao Su ,
Rajiv K. Kalia ,
Anupam Madhukar ,
Aiichiro Nakano  and
Priya Vashishta
Xiaotao Su
Affiliation:
Concurrent Computing Laboratory for Materials Simulations, Dept. of Physics & Astronomy, Dept. of Computer Science, Louisiana State University, Baton Rouge, LA 70803, [email protected]
Rajiv K. Kalia
Affiliation:
Concurrent Computing Laboratory for Materials Simulations, Dept. of Physics & Astronomy, Dept. of Computer Science, Louisiana State University, Baton Rouge, LA 70803, [email protected]
Anupam Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, Dept. of Materials Science, University of Southern California, Los Angeles, CA 90089
Aiichiro Nakano
Affiliation:
Concurrent Computing Laboratory for Materials Simulations, Dept. of Physics & Astronomy, Dept. of Computer Science, Louisiana State University, Baton Rouge, LA 70803, [email protected]
Priya Vashishta
Affiliation:
Concurrent Computing Laboratory for Materials Simulations, Dept. of Physics & Astronomy, Dept. of Computer Science, Louisiana State University, Baton Rouge, LA 70803, [email protected]
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Abstract

Large-scale molecular dynamics simulations are performed to investigate the atomiclevel stresses on InAs/GaAs mesas. The simulations are based on an interatomic-potential scheme for InAs/GaAs systems which depends on the local chemical composition. Multiresolution techniques are used to speed up the simulations. InAs/GaAs square mesas with { 101 }-type sidewalls are studied. The atomic-level pressure distribution and surface atomic stresses on the sidewalls with 12, 10, 8 and 6 monolayers of InAs overlayers have been calculated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 269
Copyright
Copyright © Materials Research Society 2000

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References

1.Xie, Q., Madhukar, A., Chen, P., and Kobayashi, N. P., Phys. Rev. Lett. 75, 2542 (1995); S. Guha, A. Madhukar, and K. C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990).Google Scholar
2.Konkar, A., Rajkumar, K. C., Xie, Q., Chen, P., Madhukar, A., Lin, H. T., and Rich, D. H., J. Cryst. Growth 150, 311 (1995).Google Scholar
3.Konkar, A., Madhukar, A., and Chen, P., Mat. Res. Soc. Symp. Proc. 380, 17 (1995).Google Scholar
4.Konkar, A., Madhukar, A., and Chen, P., Appl. Phys. Lett. 72, 220 (1998).Google Scholar
5. A detailed discussion of the interatomic potential and the parameters will be published elsewhere, Vashishta, P., Ebbsjö, I., Kalia, R. K., and Nakano, A., Rino, J., Shimojo, F., to be published.Google Scholar
6.Yu, W. and Madhukar, A., Phys. Rev. Lett. 79, 905 (1997).Google Scholar