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Multilevel Damascene Interconnection in Integration of MOCVD Cu and Low-k Fluorinated Amorphous Carbon

Published online by Cambridge University Press:  10 February 2011

Hongning Yang ,
David R. Evans ,
Tue Nguyen ,
Lisa H. Stecker ,
Bruce Ulrich  and
S.-T. Hsu
Hongning Yang
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
David R. Evans
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
Tue Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
Lisa H. Stecker
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
Bruce Ulrich
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
S.-T. Hsu
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
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Abstract

In this paper, we present studies on the integration process of CVD Cu with low-k fluorinated amorphous carbon (a-F:C) in single level and multilevel damascene structure. A thin layer of adhesion promoter material, SiC:H, was utilized to enhance the adhesion and mechanical properties of the damascene stacking layers. The SiC:H layer could also serve as a barrier to contain fluorine atoms from diffusion. The improved a-F:C damascene stacking layers are able to sustain the process of CMP, heat treatment, patterning and plasma etching. The fabrication of single and multi-level damascene structures is proved to be feasible. Some of the electrical performance data evaluated on the Cu/a-F:C damascene structure will be also presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 129
Copyright
Copyright © Materials Research Society 1999

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