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Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy

Published online by Cambridge University Press:  03 September 2012

D. E. Aspnes ,
N. Dietz ,
U. Rossow  and
K. J. Bachmann
D. E. Aspnes*
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907.
N. Dietz
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907.
U. Rossow
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202. Now at Institute of Physics, Ilmenau, Germany.
K. J. Bachmann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907.
*
†Corresponding author: [email protected].
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Abstract

Various optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surface reaction layer (SRL) and the near-surface region of the sample. When coupled with emerging microscopic methods of calculating optical properties, these approaches will allow several levels of control beyond that which has been currently demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 451
Copyright
Copyright © Materials Research Society 1997

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References

1 Granneraan, E. H. A., Thin Solid Films, 228, 1(1993).Google Scholar
2 Zah, C. E., Bhat, R. and Favire, F. J. Jr., Menocal, S. G., Andreadakis, N. C., Cheung, K.-W., Hwang, D.-M., Koza, M. A. and Lee, T.-P., IEEE J. Quantum Electronics, 27, 1440 (1991).Google Scholar
3 Abernathy, C. R., Vac., J., Sci. Technol., A11, 869 (1993).Google Scholar
4 Bedair, S. M., Vac., J., Sci. Technol., B12, 179 (1994).Google Scholar
5 Jones, A. C., Cryst., J., Sci. Technol., 129, 728 (1993).Google Scholar
6 Peters, M. G., Thibeault, B. J., Young, D. B., Scott, J. W., Peters, F. H., Gossard, A. C., and Coldren, L. A., Appl. Phys. Lett., 63, 3411(1993).Google Scholar
7 Sullivan, B. T., and Dobrowolski, J. A., Appl. Opt., 32, 2351(1993).Google Scholar
8 Chalmers, S. A., and Killeen, K. P., Appl. Phys. Lett., 62, 1182 (1993).Google Scholar
9 Killeen, K. P., and Breiland, W. G., Electron, J., Mater., 23, 179 (1994).Google Scholar
10 Lum, R. M., and McDonald, M. L., Bean, J. C., Vandenberg, J., Pernell, T. L., Robertson, A., and Karp, A., Appl. Phys. Lett., 69, 928 (1996).Google Scholar
11 Aspnes, D. E., Colas, E., Studna, A. A., Bhat, R., Koza, M. A., and Keramidas, V. G., and Karp, A., Phys. Rev. Lett., 61, 2782 (1988).Google Scholar
12 Kamiya, I., Aspnes, D. E., Tanaka, H., Florez, L. T., Harbison, J. P., and Bhat, R., and Karp, A., Phys. Rev. Lett., 68, 627 (1992).Google Scholar
13 Kamiya, I., Aspnes, D. E., Florez, L. T., and Harbison, J. P., Phys. Rev., 46, 15894 (1992).Google Scholar
14 Kisker, D. W., Fuoss, P. H., Tokuda, K. L., Renaud, G., Brennan, S., and Kahn, J. L., "X-ray analysis of GaAs surface reconstructions in H2 and N2 atmospheres," Appl. Phys. Lett., 56, 2025 (1990).Google Scholar
15 Lamelas, F. J., Fuoss, P. H., Imperatori, P., Kisker, D. W., Stephenson, G. B., and Brennen, S., Appl. Phys. Lett., 60, 2610 (1992).Google Scholar
16 Richter, W., Philos. Trans. R. Soc., London A344, 453 (1993).Google Scholar
17 Pickering, C., in Handbook of Crystal Growth, Hurle, D. T. J., (Elsevier, Amsterdam, 3, 817 1994).Google Scholar
18 McGilp, J. F., Progress in Surface Science, 49, 1 (1995).Google Scholar
19 Aspnes, D. E., and Kamiya, I., SPIE Proc., 2730, 306 (1996).Google Scholar
20 Aspnes, D. E., Thin Solid Films, 89, 249 (1982).Google Scholar
21 Aspnes, D. E., Harbison, J. P., Studna, A. A., and Florez, L. T., Vac, J., Sci. Technol., A6, 1327 (1988).Google Scholar
22 Acosta-Ortiz, S. E., and Lastras-Martinez, A., Phys. Rev., B40, 1426 (1989).Google Scholar
23 Kobayashi, N., and Horikoshi, Y., J. Appl. Phys. Jpn., 29, L702 (1990).Google Scholar
24 Kobayashi, N., and Kobayashi, Y., Thin Solid Films, 225, 32 (1993).Google Scholar
25 Dietz, N., and Lewerenz, H. J., Appl. Surf. Sci., 69, 350. (1993).Google Scholar
26 Bachmann, K. J., Rossow, U., and Dietz, N., Mater. Sci. & Eng., B35, 472 (1995).Google Scholar
27 Dietz, N., and Bachmann, K. J., Vacuum, 47, 133 (1996).Google Scholar
28 Dadap, J. I., Doris, B., Deng, Q., Downer, M. C., and Diebold, A. C., Applied Physics Letters, 64, 2139–2141 (1994).Google Scholar
29 Pidduck, A. J., Robbins, D. J., Cullis, A. G., Gasson, D. B., and Glasper, J. L., Electrochem., J., Soc., 136, 3083 (1989).Google Scholar
30 Celii, F. G., Beam III, E. A., Files-Sesler, L. A., Liu, H.-Y., and Kao, Y. C., Appl. Phys. Lett., 62, 2705 (1993).Google Scholar
31 Epier, J. E., and Schweizer, H. P., Appl. Phys. Lett., 63, 1228 (1993).Google Scholar
32 Rossow, U., Mantese, L., and Aspnes, D. E., Berlin, , Scheffler, M., Zimmerman, R., eds. (World Press, Singapore, Proc. 23rd Internat. Conf. Phys. Semicond, 831 (1996).Google Scholar
33 Wijers, C. M. J., and Poppe, G. P. M., Phys. Rev., B46, 7605 (1992).Google Scholar
34 Mendoza, B. S., and Mochán, W. L., Phys. Rev., B53, R10473 (1996).Google Scholar
35 See, for example Azzam, R. M. A., and Bashara, N. M., Ellipsometry and Polarized Light, (North-Holland, Amsterdam, (1977).Google Scholar
36 Aspnes, D. E., Quinn, W. E., Tamargo, M. C., Pudensi, M. A. A., and Schwarz, S. A., Brasil, M. J. S. P. Nahory, R. E., and Gregory, S., Appl. Phys. Lett, 60, 1244 (1992).Google Scholar
37 Pollak, F. H., and Shen, H., Electron, J., Mater., 19, 399 (1990).Google Scholar
38 Glembocki, O. J., Tuchman, J. A., Ko, K. K., Pang, S. W., Giordana, A., and Stutz, C. E., Gregory, S., Mat. Res. Soc. Symp. Proc., 324, 153 (1994).Google Scholar
39 Aspnes, D. E., Opt, J., Soc. Am., 10, 974, 83 (1993).Google Scholar
40 Chiaradia, P., Chiarotti, G., Nannarone, S., and Sassaroli, P., Solid State Commun., 26, 813 (1978).Google Scholar
41 Hingerl, K., Aspnes, D. E., and Kamiya, I., Surface Sci., 26, 813 (1978).Google Scholar
42 Uwai, K., and Kobayashi, N., Appl. Phys. Lett., 65, 150 (1994).Google Scholar
43 Zorn, M., Jönsson, J., Krost, A., Richter, W., Zettler, J.-T., Ploska, K., and Reinhardt, F. Cryst, J., Growth, 145, 53 (1994).Google Scholar
44 Maracas, G. N., Kuo, C. H., Anand, S., Droopad, R., Sohie, G. R. L., and Levola, T., Vac, J., Sci. Technol., A13, 727 (1995).Google Scholar
45 Herzinger, C., Johs, B., Chow, P., Reich, D., Carpenter, G., Croswell, D., and Van Hove, J., Mat. Res. Soc. Symp. Proc., 406, 347 (1996).Google Scholar