Article contents
Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy
Published online by Cambridge University Press: 03 September 2012
Abstract
Various optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surface reaction layer (SRL) and the near-surface region of the sample. When coupled with emerging microscopic methods of calculating optical properties, these approaches will allow several levels of control beyond that which has been currently demonstrated.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
- 1
- Cited by