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Multilayer Graphene-Based Carbon Interconnect

Published online by Cambridge University Press:  28 February 2012

Tianhua Yu ,
Edwin Kim ,
Nikhil Jain  and
Bin Yu
Tianhua Yu
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A. Novellus Systems Inc. San Jose, CA 95134, U.S.A.
Edwin Kim
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A.
Nikhil Jain
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A.
Bin Yu
Affiliation:
College of Nanoscale Science and Engineering, State University of New York at Albany, Albany, NY 12203, U.S.A.
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Abstract

3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Keywords

nanoscalemicroelectronicsnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa15-26
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Josell, D., Brongersma, S. H., and Tőkei, Z., Annu. Rev. Mater. Res. 39, 231 (2009).Google Scholar
2. www.itrs.net, ITRS 2010 Edition.Google Scholar
3. Wang, P. and Filippi, R. G., Appl. Phys. Lett. 78, 3578 (2001).Google Scholar
4. Saito, T., Yamada, T., Fabris, D., Kitsuki, H., Wilhite, P., Suzuki, M., and Yang, C., Appl. Phys. Lett. 93, 102108 (2008).Google Scholar
5. Collins, P. G., Hersam, M., Arnold, M., Martle, R., and Avouris, P., Phys. Rev. Lett. 86, 3128 (2001).Google Scholar
6. Kitsuki, H., Yamada, T., Fabris, D., Jameson, J., Wilhite, P., Suzuki, M., and Yang, C., Appl. Phys. Lett. 92, 173110 (2008).Google Scholar
7. Geim, A. K. and Novoselov, K. S., Nature Mater. 6, 183 (2007).Google Scholar
8. Du, X., Skachko, I., Barker, A., and Andrei, E. Y., Nat. Nano. 3, 491 (2008).Google Scholar
9. Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., and Lau, C. N., Nano Lett. 8, 902 (2008).Google Scholar
10. Naeemi, A. and Meindl, J. D., IEEE Electron Dev. Lett. 28, 428 (2007).Google Scholar
11. Yu, T. Lee, E. Briggs, B., Nagabhirava, B., Yu, B., IEEE Electron Dev. Lett. 31, 1155 (2010).Google Scholar
12. Murali, R., Yang, Y., Brenner, K., Beck, T., and Meindl, J. D., Appl. Phys. Lett. 94, 3114 (2009).Google Scholar
13. Sui, Y. and Appenzeller, J., Nano Lett. 9, 2973 (2009).Google Scholar
14. Murali, R., Brenner, K., Yang, Y., Beck, T., and Meindl, J. D., IEEE Electron Dev. Lett. 30, 611 (2009).Google Scholar
15. Ferrari, A., Meyer, J., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K., Roth, S., and Geim, A., Phys. Rev. Lett. 97, 187401 (2006).Google Scholar
16. Venugopal, A., Colombo, L., and Vogel, E. M., Appl. Phys. Lett., 96, 013512 (2011).Google Scholar
17. Nagashio, K., Nishimura, T., Kita, K., and Toriumi, A., Jpn. J. Appl. Phy., 49, 051304 (2010).Google Scholar
18. Brenner, K. and Murali, R., Appl. Phys. Lett. 96, 063104 (2010).Google Scholar
19. Moser, J., Barreiro, A., and Bachtold, A., Appl. Phys. Lett. 91, 163513 (2007).Google Scholar
20. Wang, P. and Filippi, R. G., Appl. Phys. Lett. 78, 3578 (2001).Google Scholar