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Multiconfigurational Carbon-Group V Pair Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

E. Gürer  and
B. W. Benson
E. Gürer
Affiliation:
Department of physics, Lehigh University Bethlehem, Pennsylvania, 18015
B. W. Benson
Affiliation:
Department of physics, Lehigh University Bethlehem, Pennsylvania, 18015
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Abstract

In addition to a new configuration of the previously reported multistable carbon-phosphorus pair, we report on two new multiconfìgurational defects in electron irradiated silicon doped, with arsenic and antimony. These defects are also identified as interstitial carbon-substitutional group V pairs, (). We identified two different types of metastability for . Type I is similar to the bistable carbon-carbon pair defect for which a bond switching mechanism has been reported [1]. Type II is similar to donor-acceptor pairs in silicon which show electrostatically driven metastability [2,3]. The three pairs have many similar features, but also show surprising donor related differences. In this paper we will discuss the general features of these defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 295
Copyright
Copyright © Materials Research Society 1990

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References

1 Song, L.W., Benson, B.W. and Watkins, G.D., Appl. Phys. Lett. 51, 1155 (1987).Google Scholar
2 Van Kooten, J.J., Weller, G.A. and Ammerlaan, C.A.J. Phys. Rev. B, 30, 4564 (1984).Google Scholar
3 Chantre, A. and Bois, D., Phys. Rev. B, 31,7979 (1985).Google Scholar
4 Kimerling, L.C., Blood, P. and Gibson, W.M., in Defects and Radiation Effects in Semiconductors, 1978 (IOP Conf. Se. No. 46, London 1979) p. 273.Google Scholar
5 Song, L.W., PhD dissertation thesis, unpublished 1988.Google Scholar
6 Song, L.W., Benson, B.W. and Watkins, G.D., Phys. Rev. B 33, 1452 (1986).Google Scholar
7 Chantre, A., Benton, J.L., Asom, M.T. and Kimerling, L.C. Mat. Sci. For. Vol. 10–12 (1986) p. 1111.Google Scholar
8 Benson, B.W. and Gürer, E., B. Am. Phys. Soc. 34, 834 (1989).Google Scholar
9 Benson, B.W. and Gürer, E., Mat. Sci. For. Vol. 38–41. (1989) p. 391.Google Scholar
10 Gürer, E. and Benson, B.W., B. Am. Phys. Soc. 34, 834 (1989).Google Scholar
11 Watkins, G.D. and Brower, K.L., Phys. Rev. Lett. 36, 1329 (1976).Google Scholar