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Multiconfigurational Carbon-Group V Pair Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

E. Gürer  and
B. W. Benson
E. Gürer
Affiliation:
Department of physics, Lehigh University Bethlehem, Pennsylvania, 18015
B. W. Benson
Affiliation:
Department of physics, Lehigh University Bethlehem, Pennsylvania, 18015
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Abstract

In addition to a new configuration of the previously reported multistable carbon-phosphorus pair, we report on two new multiconfìgurational defects in electron irradiated silicon doped, with arsenic and antimony. These defects are also identified as interstitial carbon-substitutional group V pairs, (). We identified two different types of metastability for . Type I is similar to the bistable carbon-carbon pair defect for which a bond switching mechanism has been reported [1]. Type II is similar to donor-acceptor pairs in silicon which show electrostatically driven metastability [2,3]. The three pairs have many similar features, but also show surprising donor related differences. In this paper we will discuss the general features of these defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 295
Copyright
Copyright © Materials Research Society 1990

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References

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