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Multi-Axial Channeling Study of Disorder in Gold Implanted 6H-SiC

Published online by Cambridge University Press:  21 March 2011

W. Jiang ,
W. J. Weber ,
S. Thevuthasan  and
V. Shutthanandan
W. Jiang
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
W. J. Weber
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
S. Thevuthasan
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
V. Shutthanandan
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
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Abstract

Single-crystal wafers of 6H-SiC were irradiated at 300 K with 2 MeV Au2+ ions over fluences ranging from 0.029 to 0.8 ions/nm2. The accumulated disorder on both the Si and C sublattices in the irradiated specimens has been studied in situ using 0.94 MeV D+ channeling along <0001>, <1102> and <1011> axes. At low doses, results show that some of the Si and C defects are well aligned with the <0001> axis with more C defects shielded by the <0001> atomic rows; a higher level of C disorder is observed, which is consistent with a smaller threshold displacement energy on the C sublattice. There is only a moderate recovery of disorder, produced at and below 0.058 Au2+/nm2, during the thermal annealing at 570 K; similar behavior is observed in the higher-dose samples annealed between 720 and 870 K. The results suggest the presence of defect clusters and amorphous domains formed during the Au2+ irradiation. Reordering processes at 570 K in the weakly damaged 6H-SiC (0.12 Au2+/nm2, 300 K) appear to occur closely along the <1011> direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H6.3
Copyright
Copyright © Materials Research Society 2001

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References

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