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μm-Scale Lateral Growth of Ga-Monolayers Observed In-Situ by Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

J. Osaka  and
N. Inoue
J. Osaka
Affiliation:
NTT LSI laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, 243-O1, Japan
N. Inoue
Affiliation:
NTT LSI laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, 243-O1, Japan
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Abstract

An ultra high vacuum scanning electron microscope equipped to an MBE system is utilized to study a transient of a surface atomic structure during MBE growth of GaAs and AlGaAs by the alternate supply method. Lateral growth of a Ga-monolayer over microns is realized utilizing Ga droplets. This is confirmed by discriminating the Ga and As top layer by using the secondary electron intensity difference between the Ga and As top layer. The growth mechanism of the Ga monolayer is discussed based on the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 33
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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