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Movpe of Inp and Gaas Based Optoelectronic Materials in a Multiwafer Production Reactor Using Tba and Tbp Exclusively

Published online by Cambridge University Press:  10 February 2011

D. Schmitz ,
G. Lengeling ,
R. Beccard  and
H. Jürgensen
D. Schmitz
Affiliation:
AIXTRON GmbH, Kackertstrasse 15 – 17, D-52072 Aachen, Germany
G. Lengeling
Affiliation:
AIXTRON GmbH, Kackertstrasse 15 – 17, D-52072 Aachen, Germany
R. Beccard
Affiliation:
AIXTRON GmbH, Kackertstrasse 15 – 17, D-52072 Aachen, Germany
H. Jürgensen
Affiliation:
AIXTRON GmbH, Kackertstrasse 15 – 17, D-52072 Aachen, Germany
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Abstract

In this paper a study of the growth of GaAs and InP based materials using the alternative precursors TBAs and TBP is presented. For this purpose mass production multiple wafer reactors were employed. Both long-wavelength materials such as GaInAsP on IWP and short wavelegth like GaInP and AIGaInP on GaAs are investigated. The results demonstrate that ther is no loss of material quality when using these novel precursors. In all cases growth temperatures and V/III ratios could be significantly lowered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 327
Copyright
Copyright © Materials Research Society 1996

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