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Movpe Growth of GaInP/AlGaInP Heterostructure for Visible Laser

Published online by Cambridge University Press:  21 February 2011

Myeong S. Oh ,
Nam H. Kim ,
Jong W. Lee ,
Jun Y. Kim  and
Tae I. Kim
Myeong S. Oh
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Nam H. Kim
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Jong W. Lee
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Jun Y. Kim
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Tae I. Kim
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
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Abstract

The GaInP/AlGaInP heterostructure was grown on (100) GaAs substrate using low pressure metal-organic vapor phase epitaxy (LP MOVPE) . The growth temperature and pressure were held constant at 740 °C and 40 torr, respectively. The GalnP multiquantum well layers from 10 Å to 85 A were lattice matched to the substrate. High resolution transmission electron microscopy and low temperature photoluminescence measurements indicated that the GaInP/AlGaInP well layers were uniform in thickness and that the interface was abrupt and free of defects. For high performance of visible laser diodes, highly doped p-AlGaInP layer(8X1017/cm3) was obtained. It was also found that the Zn acceptor concentration increased with growth rate. In this study, the GaInP/AlGaInP laser diode, 645nm and 20mW, was fabricated by employing multiquantum well and highly doped p-cladding layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 365
Copyright
Copyright © Materials Research Society 1994

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