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Moving Species in Pt2Si, Ni2Si and CrSi2 Formed by Ion Mixing and Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

X. A. Zhao ,
K. Affolter  and
M-A. Nicolet
X. A. Zhao
Affiliation:
California Institute of Technlogy, Pasadena, CA 91125
K. Affolter
Affiliation:
California Institute of Technlogy, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technlogy, Pasadena, CA 91125
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Abstract

We have determined the dominant moving species during the formation of CrSi2, Ni2Si, and Pt2Si by irradiating with 600 keV Xe ions thin bilayers of evaporated metal on silicon and silicon on metal above room temperature. Two very thin markers were placed at the metal-silicon interface and at the bottom interface with the Si02 substrate. The separation of the two markers as a function of the amount of silicide formed by either ion mixing or thermal annealing was monitored by backscattering spectrometry. This experiment identifies the dominant moving species. The results establish that the moving species for ion mixing and for thermal annealing are the same in CrSi2, but not in Ni2Si and Pt2Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 165
Copyright
Copyright © Materials Research Society 1985

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References

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